mrf7s38010h

Manufacturer Part Numbermrf7s38010h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf7s38010h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
DD
2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 15 dB
Drain Efficiency — 17%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW
Peak Tuned Output Power
• P
@ 1 dB Compression Point w 10 Watts CW
out
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W CW
Case Temperature 77°C, 2 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
= 30 Volts, I
= 160 mA, P
=
DQ
out
3
/
, 4 bursts, 7 MHz
4
Document Number: MRF7S38010H
Rev. 0, 8/2007
MRF7S38010HR3
MRF7S38010HSR3
3400 - 3600 MHz, 2 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465I - 02, STYLE 1
NI - 400 - 240
MRF7S38010HR3
CASE 465J - 02, STYLE 1
NI - 400S - 240
MRF7S38010HSR3
Symbol
Value
Unit
V
- 0.5, +65
Vdc
DS
V
- 6.0, +10
Vdc
GS
V
32, +0
Vdc
DD
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
2.05
2.24
MRF7S38010HR3 MRF7S38010HSR3
1

mrf7s38010h Summary of contents

  • Page 1

    ... Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 30 Volts 160 mA out bursts, 7 MHz 4 Document Number: MRF7S38010H Rev. 0, 8/2007 MRF7S38010HR3 MRF7S38010HSR3 3400 - 3600 MHz AVG WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465I - 02, STYLE 400 - 240 MRF7S38010HR3 CASE 465J - 02, STYLE 1 ...

  • Page 2

    ... WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S38010HR3 MRF7S38010HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

  • Page 3

    ... MHz Bandwidth — 20 — — 1.04 — — 2.22 — — 1.88 — — 25.9 — — 0.025 — — 0.246 — MRF7S38010HR3 MRF7S38010HSR3 Unit dBc dB % rms MHz dB ° ns ° dB/°C dBm/°C 3 ...

  • Page 4

    ... Microstrip Z9 0.116″ x 0.367″ Microstrip Z10 0.064″ x 0.307″ Microstrip Figure 1. MRF7S38010HR3(HSR3) Test Circuit Schematic Table 5. MRF7S38010HR3(HSR3) Test Circuit Component Designations and Values Part B1 95 Ω, 100 MHz Long Ferrite Bead, Surface Mount C1 2.2 pF Chip Capacitor C2 2 ...

  • Page 5

    ... MRF7S38010H/HS Rev. 1 Figure 2. MRF7S38010HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C4 C3 MRF7S38010HR3 MRF7S38010HSR3 ...

  • Page 6

    ... 3495 MHz 3505 MHz 11 Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S38010HR3 MRF7S38010HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 160 mA DD out DQ ...

  • Page 7

    ... TWO −TONE SPACING (MHz) versus Tone Spacing −15 −30_C −20 25_C 85_C −25 −30 −30_C −35 − −30_C C −45 25_C 85_C −50 −55 − 3500 MHz OUTPUT POWER (WATTS) CW out MRF7S38010HR3 MRF7S38010HSR3 100 = 160 ...

  • Page 8

    ... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S38010HR3 MRF7S38010HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 17%. ...

  • Page 9

    ... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Output Matching Network MRF7S38010HR3 MRF7S38010HSR3 9 ...

  • Page 10

    ... MRF7S38010HR3 MRF7S38010HSR3 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

  • Page 11

    ... RF Device Data Freescale Semiconductor MRF7S38010HR3 MRF7S38010HSR3 11 ...

  • Page 12

    ... MRF7S38010HR3 MRF7S38010HSR3 12 RF Device Data Freescale Semiconductor ...

  • Page 13

    ... RF Device Data Freescale Semiconductor MRF7S38010HR3 MRF7S38010HSR3 13 ...

  • Page 14

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet MRF7S38010HR3 MRF7S38010HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

  • Page 15

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S38010H Rev. 0, 8/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...