mrf7s38010h Freescale Semiconductor, Inc, mrf7s38010h Datasheet - Page 3

• Manufacturer Part Number: mrf7s38010h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) V
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM
0.01% Probability on CCDF.
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Mask System Type G @ P
Relative Constellation Error @ P
Error Vector Magnitude
Video Bandwidth @ 12 W PEP P
Gain Flatness in 200 MHz Bandwidth @ P
Average Deviation from Linear Phase in 200 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. RLE = 20Log(EVM/100)
(Typical EVM Performance @ P
Signal Call)
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
@ P
f = 3500 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
out
= 10 W CW
(1)
out
out
Characteristic
= 2 W Avg.
= 10 W CW, f = 3500 MHz
out
out
out
= 2 W Avg.
where IM3 = - 30 dBc
= 2 W Avg. with OFDM 802.16d
(T
C
out
= 25°C unless otherwise noted) (continued)
Point F at 17.5 MHz Offset
out
Point B at 3.5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
= 2 W Avg.
Point C at 5 MHz Offset
= 10 W CW,
(1)
DD
= 30 Vdc, I
Symbol
ΔP1dB
Delay
Mask
EVM
VBW
RCE
ΔΦ
ΔG
G
Φ
F
DQ
DD
= 160 mA, 3400 - 3600 MHz Bandwidth
= 30 Vdc, I
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MRF7S38010HR3 MRF7S38010HSR3
DQ
= 160 mA, P
0.025
0.246
1.04
2.22
1.88
25.9
Typ
- 26
- 38
- 43
- 60
- 60
- 33
2.3
20
3
/
4
, 4 Bursts, PAR = 9.5 dB @
out
= 2 W Avg.,
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
dBm/°C
% rms
dB/°C
MHz
Unit
dBc
dB
dB
ns
°
°
3