mrf7s38010h Freescale Semiconductor, Inc, mrf7s38010h Datasheet - Page 7

• Manufacturer Part Number: mrf7s38010h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
19
18
17
16
15
14
13
12
11
1
1
G
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
Figure 7. Intermodulation Distortion Products
ps
Figure 10. Power Gain and Drain Efficiency
DD
η
= 30 Vdc, I
T
D
C
= −30_C
25_C
85_C
P
versus CW Output Power
P
out
DQ
out
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 160 mA
3rd Order
V
I
f = 3500 MHz
DQ
DD
= 160 mA
= 30 Vdc
5th Order
10
45
40
35
30
25
20
15
10
5
0
10
1
Figure 9. WiMAX, ACPR, Power Gain and Drain
V
f = 3500 MHz, 802.16d, 64 QAM
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
DD
−30_C
G
TYPICAL CHARACTERISTICS
= 30 Vdc, I
ps
7th Order
P
Efficiency versus Output Power
85_C
out
ACPR
, OUTPUT POWER (WATTS) AVG. WiMAX
25_C
DQ
= 160 mA
η
30
50
D
50
45
40
35
30
25
20
15
0
3
/
4
−10
−20
−30
−40
−50
−60
−70
17
16
15
14
13
12
11
1
0
Figure 8. Intermodulation Distortion Products
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
IM5 −L
85_C
IM5 −U
DD
Figure 11. Power Gain versus Output Power
−30_C
= 30 Vdc, P
T
C
10
85_C
= −30_C
85_C
5
P
−30_C
out
out
IM7 −L
IM7 −U
25_C
versus Tone Spacing
25_C
TWO −TONE SPACING (MHz)
MRF7S38010HR3 MRF7S38010HSR3
, OUTPUT POWER (WATTS) CW
= 12 W (PEP), I
20
10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
IM3 −U
10
V
DQ
DD
= 160 mA
= 28 V
15
IM3 −L
30 V
I
f = 3500 MHz
DQ
20
32 V
= 160 mA
100
25
7