mrf7s38010h Freescale Semiconductor, Inc, mrf7s38010h Datasheet - Page 8

• Manufacturer Part Number: mrf7s38010h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S38010HR3 MRF7S38010HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
0
802.16d, 64 QAM
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
Figure 13. OFDM 802.16d Test Signal
Compressed Output
Signal @ 2 W Avg. P
2
3
PEAK −TO−AVERAGE (dB)
/
4
, 4 Bursts, 7 MHz
4
out
10
10
10
10
10
9
8
7
6
5
90
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
6
110
Input Signal
TYPICAL CHARACTERISTICS
T
130
J
DD
WIMAX TEST SIGNAL
8
, JUNCTION TEMPERATURE (°C)
= 30 Vdc, P
150
10
out
170
= 2 W Avg., and η
−100
−110
190
−10
−20
−30
−40
−50
−60
−70
−80
−90
−9
Figure 14. WiMAX Spectrum Mask Specifications
Point D
210
−7.2
D
= 17%.
−5.4
230
Point C
−3.6
Point B
250
f, FREQUENCY (MHz)
−1.8
Channel BW
7 MHz
0
Freescale Semiconductor
1.8
Point B
3.6
Point C
RF Device Data
System Type G
5.4
7.2
Point D
9