mrf7s27130h

Manufacturer Part Numbermrf7s27130h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf7s27130h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
= 28 Volts, I
DD
P
= 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM
out
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Peak Tuned Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
CW Operation @ T
= 25°C
C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
 Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S27130H
MRF7S27130HSR3
= 1500 mA,
DQ
3
/
,
4
2500- 2700 MHz, 23 W AVG., 28 V
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
CW
Symbol
R
θJC
MRF7S27130HR3 MRF7S27130HSR3
Rev. 0, 9/2007
MRF7S27130HR3
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
MRF7S27130HR3
NI - 780S
MRF7S27130HSR3
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
°C
150
°C
225
°C
150
W
0.83
°C/W
(2,3)
Value
Unit
°C/W
0.32
0.36
1

mrf7s27130h Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.  Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S27130H MRF7S27130HSR3 = 1500 mA 2500- 2700 MHz AVG ...

  • Page 2

    ... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S27130HR3 MRF7S27130HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

  • Page 3

    ... Bursts, PAR = 9 dBc — — — — — — — — — — — — dB — 2.2 — % rms MHz — 40 — — 1.2 — dB — 135 — ° — 1.5 — ns — 81.3 — ° — 0.013 — dB/°C — 0.01 — dBm/°C MRF7S27130HR3 MRF7S27130HSR3 3 ...

  • Page 4

    ... Microstrip Z9 0.106″ x 0.716″ Microstrip Z10 0.413″ x 0.716″ Microstrip Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values Part Chip Capacitor C2, C6, C7, C8, C9, C10, C11 10 µ Chip Capacitors ...

  • Page 5

    ... Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C11 C9 C5 C10 MRF7S27130H/HS Rev. 0 MRF7S27130HR3 MRF7S27130HSR3 5 ...

  • Page 6

    ... 2595 MHz 2605 MHz Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S27130HR3 MRF7S27130HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1500 mA DD out 802.16d, 64 QAM ...

  • Page 7

    ... T = −30_C C −50 −55 25_C 85_C −60 −65 100 300 I = 1500 2600 MHz 100 125 150 175 P , OUTPUT POWER (WATTS) CW out MRF7S27130HR3 MRF7S27130HSR3 100 32 V 200 7 ...

  • Page 8

    ... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S27130HR3 MRF7S27130HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 20%. ...

  • Page 9

    ... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load f = 2500 MHz Output Matching Network MRF7S27130HR3 MRF7S27130HSR3 9 ...

  • Page 10

    ... (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S27130HR3 MRF7S27130HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc (LID) aaa T A ccc ...

  • Page 11

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Sept. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S27130HR3 MRF7S27130HSR3 11 ...

  • Page 12

    ... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S27130HR3 MRF7S27130HSR3 Document Number: MRF7S27130H Rev. 0, 9/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...