mrf7s27130h Freescale Semiconductor, Inc, mrf7s27130h Datasheet - Page 2

• Manufacturer Part Number: mrf7s27130h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF7S27130HR3 MRF7S27130HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2700 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 2 x V
GS(Q)
DS
D
D
D
D
GS
GS
GS
= 348 µAdc)
= 1500 mAdc)
= 1500 mAdc, Measured in Functional Test)
= 3.4 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(2)
Characteristic
(1)
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
3
/
4
, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
DQ
Symbol
V
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
GG(Q)
C
G
= 1500 mA, P
IRL
DSS
DSS
GSS
η
oss
rss
iss
ps
D
Min
1.2
0.1
7.5
out
15
18
—
—
—
—
—
—
—
—
—
4
= 23 W Avg., f = 2500 MHz and f =
0.24
10.4
16.5
Typ
326
711
2.7
5.4
8.2
- 49
—
—
—
20
- 8
2
1B (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
18.5
- 46
2.7
0.3
10
—
—
—
—
23
—
- 5
1
1
7
RF Device Data
(continued)
µAdc
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
pF
pF
pF
dB
dB
dB
%