mrf7s27130h Freescale Semiconductor, Inc, mrf7s27130h Datasheet - Page 6

• Manufacturer Part Number: mrf7s27130h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF7S27130HR3 MRF7S27130HSR3
19
18
17
16
15
14
I
DQ
2000 mA
1500 mA
1200 mA
1000 mA
= 2250 mA
Figure 5. Two - Tone Power Gain versus
1
V
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DD
= 28 Vdc, I
P
out
, OUTPUT POWER (WATTS) PEP
Output Power
DQ
= 1500 mA
Figure 3. WiMAX Broadband Performance @ P
Figure 4. WiMAX Broadband Performance @ P
10
17.9
17.8
17.7
17.6
17.5
17.4
17.3
17.2
17.1
17.7
17.6
17.5
17.4
17.3
17.2
17.1
16.9
16.8
16.7
18
17
17
2500
2500
V
802.16d, 64 QAM
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
V
802.16d, 64 QAM
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
G
DD
DD
ps
2525
2525
= 28 Vdc, P
= 28 Vdc, P
100
TYPICAL CHARACTERISTICS
2550
2550
out
out
3
3
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
/
2575
/
2575
= 23 W (Avg.), I
= 43 W (Avg.), I
4,
4,
4 Bursts, 7 MHz Channel Bandwidth
4 Bursts, 7 MHz Channel Bandwidth
500
ACPR
ACPR
η
IRL
D
2600
2600
IRL
η
D
DQ
DQ
2625
2625
= 1500 mA
= 1500 mA
G
−10
−20
−30
−40
−50
−60
ps
2650
2650
Figure 6. Third Order Intermodulation Distortion
V
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DD
out
out
2675
2675
= 28 Vdc, I
1
= 23 Watts Avg.
= 43 Watts Avg.
2700
2700
P
out
DQ
25
24
23
22
21
20
33
32
31
30
29
28
−46
−47
−48
−49
−36
−37
−38
−39
−50
−40
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 1500 mA
1200 mA
I
DQ
= 2250 mA
−5
−6
−7
−8
−9
−10
−5
−6
−7
−8
−9
−10
10
Freescale Semiconductor
1500 mA
1000 mA
RF Device Data
2000 mA
100
200