mrf7s27130h Freescale Semiconductor, Inc, mrf7s27130h Datasheet - Page 7

• Manufacturer Part Number: mrf7s27130h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−20
−30
−40
−50
−60
−70
−80
19
18
17
16
15
14
13
1
1
V
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 7. Intermodulation Distortion Products
Figure 10. Power Gain and Drain Efficiency
3rd Order
DD
= 28 Vdc, I
η
G
D
ps
P
versus CW Output Power
P
5th Order
out
DQ
T
out
C
, OUTPUT POWER (WATTS) CW
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 1500 mA
= −30_C
85_C
25_C
10
10
7th Order
V
I
f = 2600 MHz
DQ
DD
55
50
45
40
35
30
25
20
15
10
= 1500 mA
5
0
= 28 Vdc
1
Figure 9. WiMAX, ACPR, Power Gain and Drain
V
f = 2600 MHz, 802.16d, 64 QAM
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
G
η
DD
D
ps
TYPICAL CHARACTERISTICS
= 28 Vdc, I
−30_C
100
P
Efficiency versus Output Power
100
out
, OUTPUT POWER (WATTS) AVG. WiMAX
85_C
DQ
25_C
300
= 1500 mA
200
60
50
40
30
20
10
0
10
ACPR
3
/
4
−10
−20
−30
−40
−50
−60
0
18
17
16
15
14
13
1
0
Figure 8. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
IM3−U
IM3−L
IM5−L
DD
Figure 11. Power Gain versus Output Power
= 28 Vdc, P
25
−30_C
100
85_C
−30_C
T
C
= −30_C
P
50
out
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
25_C
85_C
85_C
25_C
MRF7S27130HR3 MRF7S27130HSR3
25_C
= 130 W (PEP), I
, OUTPUT POWER (WATTS) CW
300
75
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
V
DD
10
100
= 24 V
IM5−U
DQ
= 1500 mA
125
IM7−U
I
f = 2600 MHz
DQ
150
28 V
= 1500 mA
IM7−L
175
32 V
100
200
7