mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet
mrf7s21170h
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... MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21170H MRF7S21170HSR3 2110 - 2170 MHz AVG Volts ...
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... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S21170HR3 MRF7S21170HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...
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... Delay = 170 W CW ΔΦ out ΔG ΔP1dB Min Typ Max = 1400 mA, 2110 - 2170 MHz Bandwidth — 25 — — 0.4 — — 1.95 — — 1.7 — — 18 — — 0.015 — — 0.01 — MRF7S21170HR3 MRF7S21170HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Z8 0.119″ x 0.787″ Microstrip Z9 0.077″ x 0.880″ Microstrip Z10 0.459″ x 1.000″ Microstrip Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values Part C1 100 pF Chip Capacitor C2, C3, C7, C8, C17, C18 6.8 pF Chip Capacitors C4, C15 0.3 pF Chip Capacitors C5 0 ...
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... Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...
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... Vdc 2135 MHz 2145 MHz DD Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S21170HR3 MRF7S21170HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1400 mA DD out DQ Single −Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7 ...
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... TWO −TONE SPACING (MHz) versus Tone Spacing 54 Ideal Actual 24 18 120 −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 1400 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21170HR3 MRF7S21170HSR3 100 400 7 ...
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... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S21170HR3 MRF7S21170HSR3 8 TYPICAL CHARACTERISTICS 1400 2140 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Z source f = 2060 MHz Output Matching Network MRF7S21170HR3 MRF7S21170HSR3 9 ...
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... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω P3dB 4.43 - j11.85 Figure 17. Pulsed CW Output Power versus Input Power MRF7S21170HR3 MRF7S21170HSR3 10 62 Ideal P3dB = 54.65 dBm (290 P1dB = 53.54 dBm 55 (226 W) ...
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... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF7S21170HR3 MRF7S21170HSR3 11 ...
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... Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, updated to include output power level at functional test MRF7S21170HR3 MRF7S21170HSR3 12 PRODUCT DOCUMENTATION REVISION HISTORY Description to On Characteristics table, p ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S21170H Rev. 4, 5/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...