mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 10

• Manufacturer Part Number: mrf7s21170h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21170HR3 MRF7S21170HSR3
10
61
60
59
58
57
56
55
54
53
52
51
32
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 52.75 dBm
(188 W)
33
P3dB
Figure 17. Pulsed CW Output Power
P3dB = 53.56 dBm (226 W)
34
Test Impedances per Compression Level
35
versus Input Power
4.43 - j11.85
P
P6dB = 53.89 dBm (244 W)
36
in
, INPUT POWER (dBm)
Z
V
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
source
DD
Ω
37
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
= 28 Vdc, I
38
39
DQ
= 1400 m, Pulsed CW
40
0.81 - j2.87
Z
41
load
Ω
42
Ideal
Actual
43
44
62
61
60
59
58
57
56
55
54
53
52
33
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 53.54 dBm
(226 W)
34
P3dB
Figure 18. Pulsed CW Output Power
P3dB = 54.65 dBm (290 W)
35
Test Impedances per Compression Level
36
versus Input Power
4.43 - j11.85
P
V
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
37
in
DD
, INPUT POWER (dBm)
Z
source
= 32 Vdc, I
P6dB = 54.88 dBm (307 W)
Ω
38
39
DQ
Freescale Semiconductor
40
= 1400 mA, Pulsed CW
41
0.72 - j2.87
Z
42
load
RF Device Data
Ω
43
Ideal
Actual
44
45