mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 12

• Manufacturer Part Number: mrf7s21170h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF7S21170HR3 MRF7S21170HSR3
12
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
4
Sept. 2006
June 2006
Aug. 2006
May 2006
May 2007
Date
• Initial Release of Data Sheet
• Added Class C to description of parts, pg. 1
• Changeded “≥” to “ - ” in the Device Output Signal Par bullet, pg. 1
• Changed typ value from ±9 to 18 in Part - to - Part Phase Variation characteristic description in Table 4,
• Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
• Added Greater Negative Source bullet to Features section, p. 1
• Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz, p. 7
• Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
• Added “Insertion” to Part - to - Part Phase Variation characteristic description in Table 4, Typical
• Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
• Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
• Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
• Added Figure 10, Digital Predistortion Correction, p. 6
• Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
• Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
• Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
• Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard,
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
• Updated verbiage in Typical Performances table, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps
• Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal,
Typical Performances, p. 2
Performances, p. 2
Performances, p. 2
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
and Values, p. 3
p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
and added Fixture Gate Quiescent Voltage, V
numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
dynamic range, p. 7
operating characteristics and location of MTTF calculator for device, p. 8
updated to include output power level at functional test, p. 8
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
GG(Q)
to On Characteristics table, p. 2
Freescale Semiconductor
RF Device Data
2
and listed
GS(Q)
,