mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 6

• Manufacturer Part Number: mrf7s21170h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21170HR3 MRF7S21170HSR3
6
18
17
16
15
14
13
1
700 mA
I
DQ
1050 mA
1400 mA
1750 mA
Figure 5. Two - Tone Power Gain versus
= 2100 mA
V
Two −Tone Measurements, 10 MHz Tone Spacing
P
DD
out
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Output Power
10
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
17
16
15
14
13
12
10
17
16
15
14
13
12
10
11
11
2060
2060
9
9
PARC
PARC
IRL
Broadband Performance @ P
Broadband Performance @ P
η
IRL
η
G
G
D
D
ps
ps
2080
2080
100
V
Single −Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
V
Single −Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
TYPICAL CHARACTERISTICS
DD
DD
2100
2100
= 28 Vdc, P
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2120
2120
400
out
out
= 50 W (Avg.), I
= 84 W (Avg.), I
2140
2140
2160
2160
out
out
−10
−20
−30
−40
−50
−60
DQ
DQ
= 50 Watts Avg.
= 84 Watts Avg.
2180
2180
1
= 1400 mA
Figure 6. Third Order Intermodulation Distortion
= 1400 mA
V
Two −Tone Measurements, 10 MHz Tone Spacing
I
DQ
DD
= 700 mA
2200
2200
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
1050 mA
P
out
2220
2220
, OUTPUT POWER (WATTS) PEP
versus Output Power
36
34
32
30
28
0
44
42
40
38
36
−1
−2
−2
−3
−4
−3
−5
10
1750 mA
2100 mA
−5
−10
−15
−20
−25
−5
−10
−15
−20
−25
Freescale Semiconductor
1400 mA
RF Device Data
100
400