mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 9

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mrf7s21170h

Manufacturer Part Number
mrf7s21170h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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RF Device Data
Freescale Semiconductor
Figure 16. Series Equivalent Source and Load Impedance
f = 2220 MHz
Input
Matching
Network
Z
Z
source
load
2060
2080
2100
2120
2140
2160
2180
2200
2220
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
f = 2060 MHz
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
Z
source
load
4.57 - j10.70
4.57 - j10.38
4.57 - j10.06
4.52 - j9.72
4.40 - j9.42
4.15 - j9.12
4.44 - j8.82
4.19 - j8.53
4.12 - j8.23
Z
DQ
source
Device
Under
Test
W
= 1400 mA, P
Z
Z
o
out
load
= 10 Ω
= 50 W Avg.
1.02 - j3.54
0.99 - j3.34
0.96 - j3.14
0.93 - j2.94
0.92 - j2.76
0.91 - j2.59
0.89 - j2.42
0.88 - j2.25
0.88 - j2.09
f = 2220 MHz
Z
load
W
Output
Matching
Network
Z
source
MRF7S21170HR3 MRF7S21170HSR3
f = 2060 MHz
9

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