mrf7s21150h

Manufacturer Part Numbermrf7s21150h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf7s21150h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical Single - Carrier W - CDMA Performance: V
1350 mA, P
= 44 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW
Peak Tuned Output Power
P
@ 1 dB Compression Point w 150 Watts CW
out
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80 C, 147 W CW
Case Temperature 75 C, 45 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S21150H
MRF7S21150HR3
MRF7S21150HSR3
= 28 Volts, I
=
DD
DQ
2110 - 2170 MHz, 44 W AVG., 28 V
CASE 465- 06, STYLE 1
MRF7S21150HR3
CASE 465A - 06, STYLE 1
MRF7S21150HSR3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Symbol
R
JC
MRF7S21150HR3 MRF7S21150HSR3
Rev. 0, 11/2007
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
C
150
C
225
C
(2,3)
Value
Unit
C/W
0.33
0.37
1

mrf7s21150h Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 = 28 Volts 2110 - 2170 MHz AVG ...

  • Page 2

    ... Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S21150HR3 MRF7S21150HSR3 unless otherwise noted) C Symbol I DSS I DSS I ...

  • Page 3

    ... VBW = 44 W Avg. G out F Delay = 150 W CW, out G P1dB Min Typ Max = 1350 mA, 2110 - 2170 MHz Bandwidth — 10 — — 0.418 — — 36.5 — — 2.82 — — 1.45 — — 0.013 — — 0.007 — MRF7S21150HR3 MRF7S21150HSR3 Unit MHz dB ns dB/ C dBm ...

  • Page 4

    ... Microstrip Z8 0.151 x 0.630 Microstrip Z9 0.112 x 0.630 Microstrip Z10 0.337 x 0.957 Microstrip Z11 0.176 x 0.957 Microstrip Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values Part C1 0.7 pF Chip Capacitor C2, C3 6.8 pF Chip Capacitors C4, C12 0.2 pF Chip Capacitors C5 0.3 pF Chip Capacitor ...

  • Page 5

    ... MRF7S21150H/S Rev. 7 Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C11 C2 C12 C10 C7 MRF7S21150HR3 MRF7S21150HSR3 5 ...

  • Page 6

    ... Vdc 2135 MHz 2145 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S21150HR3 MRF7S21150HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1350 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 ...

  • Page 7

    ... TWO−TONE SPACING (MHz) versus Tone Spacing 45 Ideal Actual −30_C T = −30_C C 85_C 25_C 85_C Vdc 1350 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21150HR3 MRF7S21150HSR3 80 60 25_C 300 7 ...

  • Page 8

    ... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S21150HR3 MRF7S21150HSR3 8 TYPICAL CHARACTERISTICS 1350 2140 MHz ...

  • Page 9

    ... MHz W W 2060 2.72 - j5.08 1.14 - j2.89 2080 3.10 - j5.17 1.11 - j2.75 2100 3.43 - j5.39 1.08 - j2.62 2120 3.66 - j5.74 1.04 - j2.50 2140 3.72 - j6.17 1.00 - j2.39 2160 3.59 - j6.59 0.96 - j2.28 2180 3.33 - j6.91 0.93 - j2.17 2200 2.98 - j7.10 0.89 - j2.05 2220 2.62 - j7.17 0.86 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Output Matching Network MRF7S21150HR3 MRF7S21150HSR3 9 ...

  • Page 10

    ... P , INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V Test Impedances per Compression Level Z source P3dB 4.66 - j8.05 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V MRF7S21150HR3 MRF7S21150HSR3 10 62 Ideal P1dB = 54.1 dBm (257 W) 56 Actual ...

  • Page 11

    ... M R 0.365 0.375 9.27 9.53 S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S21150HR3 MRF7S21150HSR3 11 ...

  • Page 12

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 Initial Release of Data Sheet MRF7S21150HR3 MRF7S21150HSR3 12 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

  • Page 13

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S21150H Rev. 0, 11/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...