mrf7s21150h Freescale Semiconductor, Inc, mrf7s21150h Datasheet - Page 10

• Manufacturer Part Number: mrf7s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21150HR3 MRF7S21150HSR3
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NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V
P1dB = 53.1 dBm
(200 W)
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P3dB
Figure 17. Pulsed CW Output Power
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P3dB = 54.05 dBm (254 W)
versus Input Power @ 28 V
Test Impedances per Compression Level
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P
P6dB = 54.68 dBm (294 W)
4.66 - j8.05
in
35
V
12 sec(on), 10% Duty Cycle, f = 2140 MHz
, INPUT POWER (dBm)
Z
DD
source
= 28 Vdc, I
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ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
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DQ
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= 1350 mA, Pulsed CW
0.53 - j2.26
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Z
40
load
Ideal
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Actual
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53
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NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 32 V
P1dB = 54.1 dBm
(257 W)
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P3dB
Figure 18. Pulsed CW Output Power
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P3dB = 54.94 dBm (311 W)
versus Input Power @ 32 V
Test Impedances per Compression Level
35
P
P6dB = 55.47 dBm (352 W)
4.66 - j8.05
36
in
V
12 sec(on), 10% Duty Cycle, f = 2140 MHz
, INPUT POWER (dBm)
Z
DD
source
= 32 Vdc, I
37
38
Freescale Semiconductor
DQ
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= 1350 mA, Pulsed CW
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0.64 - j2.17
Z
load
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RF Device Data
Ideal
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Actual
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