mrf7s21150h Freescale Semiconductor, Inc, mrf7s21150h Datasheet - Page 7

• Manufacturer Part Number: mrf7s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−30
−35
−40
−45
−50
−55
−60
−65
38
1
Figure 10. Digital Predistortion Correction versus
DPD Corrected
No Memory Correction
Figure 7. Intermodulation Distortion Products
V
Single−Carrier W−CDMA, Input Signal
PAR = 7.5 dB, ACPR @ 5 MHz Offset in
3.84 MHz, Integrated Bandwidth
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
3rd Order
DD
DD
Uncorrected, Upper and Lower
= 28 Vdc, I
= 28 Vdc, I
5th Order
40
P
out
DQ
DQ
ACPR and Output Power
, OUTPUT POWER (WATTS) PEP
versus Output Power
P
= 1350 mA, f = 2140 MHz
out
= 1350 mA
42
, OUTPUT POWER (dBm)
10
7th Order
44
−1
−2
−3
−4
−5
1
0
20
DPD Corrected
with Memory Correction
Compression (PARC) versus Output Power
46
V
f = 2140 MHz, Input Signal PAR = 7.5 dB
−1 dB = 39.58 W
DD
Figure 9. Output Peak - to - Average Ratio
= 28 Vdc, I
30
TYPICAL CHARACTERISTICS
100
48
P
out
DQ
, OUTPUT POWER (WATTS)
40
= 1350 mA
−2 dB = 54.29 W
300
50
50
19
18
17
16
15
14
13
−3 dB = 72.73 W
1
−10
−20
−30
−40
−50
−60
G
Figure 11. Power Gain and Drain Efficiency
0
D
ps
60
1
IM5−L
IM7−L
Figure 8. Intermodulation Distortion Products
IM5−U
IM7−U
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
= 28 Vdc, P
T
C
P
versus CW Output Power
70
= −30_C
out
85_C
25_C
, OUTPUT POWER (WATTS) CW
IM3−U
IM3−L
Ideal
Actual
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
MRF7S21150HR3 MRF7S21150HSR3
10
80
= 120 W (PEP), I
45
40
35
30
25
20
15
V
I
f = 2140 MHz
DQ
DD
10
= 1350 mA
= 28 Vdc
DQ
= 1350 mA
100
−30_C
85_C
25_C
300
60
50
40
30
20
10
0
80
7