mrf7s21110h Freescale Semiconductor, Inc, mrf7s21110h Datasheet

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mrf7s21110h

Manufacturer Part Number
mrf7s21110h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2110 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1100 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Peak Tuned Output Power
Operation
Case Temperature 80°C, 109 W CW
Case Temperature 78°C, 33 W CW
out
Power Gain — 17.3 dB
Drain Efficiency — 32.5%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 110 Watts CW
out
= 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S21110H
CASE 465- 06, STYLE 1
CASE 465A - 06, STYLE 1
2110 - 2170 MHz, 33 W AVG., 28 V
MRF7S21110HR3 MRF7S21110HSR3
MRF7S21110HSR3
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.37
0.41
150
225
(2,3)
Rev. 0, 9/2007
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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mrf7s21110h Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 = 28 Volts 2110 - 2170 MHz AVG ...

Page 2

... MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S21110HR3 MRF7S21110HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 1100 mA, 2110 - 2170 MHz Bandwidth — 10 — — 0.325 — — 0.772 — — 1.9 — — 39.7 — — 0.011 — — 0.276 — MRF7S21110HR3 MRF7S21110HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

Page 4

... Microstrip Z5 0.950″ x 0.0395″ Microstrip Z6 0.526″ x 0.0940″ Microstrip Z7 0.480″ x 1.050″ Microstrip Figure 1. MRF7S21110HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21110HR3(HSR3) Test Circuit Component Designations and Values Part C1 15 pF, Chip Capacitor C2 47 μ Tantalum Capacitor C3 8.2 pF, Chip Capacitor C4, C13 2.2 μ ...

Page 5

... Figure 2. MRF7S21110HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C13 C6 C9 C10 C11 C7 MRF7S21110HR3 MRF7S21110HSR3 C14 C12 5 ...

Page 6

... Vdc 2135 MHz 2145 MHz 14 DD Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S21110HR3 MRF7S21110HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 1100 mA DD out DQ Single − ...

Page 7

... TWO −TONE SPACING (MHz) versus Tone Spacing 60 Ideal Actual 35 = 1100 mA 30 100 −30_C T = −30_C C 85_C 25_C 85_C Vdc 1100 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21110HR3 MRF7S21110HSR3 100 70 60 25_C 300 7 ...

Page 8

... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S21110HR3 MRF7S21110HSR3 8 TYPICAL CHARACTERISTICS 1100 2140 MHz ...

Page 9

... MHz W W 2060 2.2 - j5.1 2.3 - j4.0 2080 2.2 - j5.0 2.2 - j3.9 2100 2.1 - j4.9 2.1 - j3.8 2120 2.1 - j4.8 2.1 - j3.7 2140 2.1 - j4.7 2.0 - j3.5 2160 2.0 - j4.5 2.0 - j3.4 2180 2.0 - j4.4 2.0 - j3.3 2200 2.0 - j4.3 1.8 - j3.1 2220 2.0 - j4.2 1 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Output Matching Network MRF7S21110HR3 MRF7S21110HSR3 9 ...

Page 10

... (FLANGE (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb (FLANGE) MRF7S21110HR3 MRF7S21110HSR3 10 PACKAGE DIMENSIONS Q 2X bbb ccc aaa ...

Page 11

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Sept. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S21110HR3 MRF7S21110HSR3 11 ...

Page 12

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S21110HR3 MRF7S21110HSR3 Document Number: MRF7S21110H Rev. 0, 9/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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