mrf7s19080h

Manufacturer Part Numbermrf7s19080h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf7s19080h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio
applications.
• Typical Single - Carrier W - CDMA Performance: V
750 mA, P
= 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW
Peak Tuned Output Power
• P
@ 1 dB Compression Point w 80 Watts CW
out
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 79 W CW
Case Temperature 79°C, 24 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
= 28 Volts, I
=
DD
DQ
1930 - 1990 MHz, 24 W AVG., 28 V
CASE 465- 06, STYLE 1
MRF7S19080HR3
CASE 465A - 06, STYLE 1
MRF7S19080HSR3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Symbol
R
θJC
MRF7S19080HR3 MRF7S19080HSR3
Rev. 0, 1/2007
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
°C
150
°C
225
°C
(2,3)
Value
Unit
°C/W
0.60
0.69
1

mrf7s19080h Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 = 28 Volts 1930 - 1990 MHz AVG ...

  • Page 2

    ... ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S19080HR3 MRF7S19080HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

  • Page 3

    ... W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 750 mA, 1930 - 1990 MHz Bandwidth — 90 — — 0.165 — — 1.14 — — 2.25 — — 22.3 — — 0.009 — — 0.017 — MRF7S19080HR3 MRF7S19080HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

  • Page 4

    ... Taper Z6 0.504″ x 0.800″ x 0.084″ Taper Z7 0.265″ x 0.313″ x 0.332″ x 0.040″ Taper Figure 1. MRF7S19080HR3(HSR3) Test Circuit Schematic Table 5. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values Part C1 Chip Capacitors C2, C11 13 pF Chip Capacitors C3 10 μ ...

  • Page 5

    ... Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 5 ...

  • Page 6

    ... Vdc 1955 MHz 1965 MHz DD Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S19080HR3 MRF7S19080HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.) out = 750 mA, Single−Carrier W−CDMA IRL ...

  • Page 7

    ... TWO −TONE SPACING (MHz) versus Tone Spacing 60 Ideal Actual −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 750 1960 MHz 1 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S19080HR3 MRF7S19080HSR3 100 300 7 ...

  • Page 8

    ... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19080HR3 MRF7S19080HSR3 8 TYPICAL CHARACTERISTICS 750 1960 MHz ...

  • Page 9

    ... MHz W W 1880 1.47 - j7.3 2.10 - j5.4 1900 1.22 - j6.7 1.96 - j5.0 1920 1.43 - j6.7 2.06 - j4.9 1940 1.89 - j6.8 2.27 - j5.1 1960 2.10 - j7.1 2.45 - j5.1 1980 2.11 - j7.2 2.38 - j5.0 2000 1.60 - j6.9 2.08 - j4.9 2020 1.41 - j6.9 1.84 - j4.9 2040 1.43 - j6.5 1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF7S19080HR3 MRF7S19080HSR3 9 ...

  • Page 10

    ... Microstrip Z7 0.092″ x 0.800″ Microstrip Z8 0.160″ x 0.880″ Microstrip Figure 17. MRF7S19080HR3(HSR3) Test Circuit Schematic — SCDMA Table 6. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values — SCDMA Part C1 Chip Capacitors C2, C11 13 pF Chip Capacitors C3 10 μ ...

  • Page 11

    ... Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout — SCDMA RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 11 ...

  • Page 12

    ... MHz BW −3.2 MHz Offset −90 −100 −110 −ALT1 in −120 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz 1.5 MHz f, FREQUENCY (MHz) Figure 21 Carrier TD - SCDMA Spectrum MRF7S19080HR3 MRF7S19080HSR3 12 TYPICAL CHARACTERISTICS = 750 η D Adj −U Alt− ...

  • Page 13

    ... MHz W W 1950 1.87 - j6.10 2.98 - j5.42 1960 1.94 - j6.25 3.07 - j5.47 1970 1.77 - j6.04 2.87 - j5.26 1980 1.52 - j5.47 2.53 - j4.77 1990 1.46 - j4.92 2.35 - j4.26 2000 1.49 - j4.62 2.30 - j3.99 2010 1.53 - j4.64 2.34 - j3.98 2020 1.50 - j4.85 2.34 - j4.20 2030 1.50 - j5.15 2.40 - j4.44 2040 1.62 - j5.56 2.59 - j4.75 2050 1.63 - j5.90 2.68 - j5.03 2060 1.47 - j5.86 2.52 - j4.98 2070 1.38 - j5.40 2.35 - j4. Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load MRF7S19080HR3 MRF7S19080HSR3 13 ...

  • Page 14

    ... B 4X (LID (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S19080HR3 MRF7S19080HSR3 14 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc aaa ccc ...

  • Page 15

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Jan. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S19080HR3 MRF7S19080HSR3 15 ...

  • Page 16

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S19080HR3 MRF7S19080HSR3 Document Number: MRF7S19080H Rev. 0, 1/2007 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...