mrf7s19080h Freescale Semiconductor, Inc, mrf7s19080h Datasheet - Page 2

• Manufacturer Part Number: mrf7s19080h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S19080HR3 MRF7S19080HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 10 Vdc, I
DS
D
D
D
GS
GS
= 174 μAdc)
= 750 mAdc, Measured in Functional Test)
= 1.74 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
= 750 mA, P
oss
rss
ps
D
Min
out
1.2
0.1
5.7
—
—
—
—
—
17
30
—
—
2
= 24 W Avg., f = 1932.5 MHz and f =
0.21
0.64
Typ
297
- 38
- 20
2.7
6.2
18
32
—
—
—
1C (Minimum)
2
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 35
2.7
3.8
0.3
10
20
—
—
—
—
- 9
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
%