mrf21125r3 Freescale Semiconductor, Inc, mrf21125r3 Datasheet

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mrf21125r3

Manufacturer Part Number
mrf21125r3
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance for V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =
3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in
3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Output Power
Derate above 25°C
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — - 43 dBc
ACPR — - 45 dBc
C
= 25°C
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
2110 - 2170 MHz, 125 W, 28 V
Document Number: MRF21125
MRF21125SR3
MRF21125SR3
MRF21125R3
LATERAL N - CHANNEL
MRF21125R3
RF POWER MOSFETs
NI - 880S
NI - 880
MRF21125R3 MRF21125SR3
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
1.89
0.53
330
150
200
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf21125r3 Summary of contents

Page 1

... Symbol R θJC Document Number: MRF21125 Rev. 9, 5/2006 MRF21125R3 MRF21125SR3 2110 - 2170 MHz, 125 LATERAL N - CHANNEL RF POWER MOSFETs NI - 880 MRF21125R3 NI - 880S MRF21125SR3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc 330 W 1.89 W/° +150 °C 150 °C 200 °C Value Unit 0.53 °C/W MRF21125R3 MRF21125SR3 1 ...

Page 2

... Input Return Loss ( Vdc Avg, 2-carrier W-CDMA out f1 = 2112.5 MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) 1. Part internally matched both on input and output. MRF21125R3 MRF21125SR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I GSS I DSS ...

Page 3

... MHz, η = 1600 mA 2110 MHz, IMD = 1600 mA 2110 MHz 1600 mA 2170.0 MHz) η = 1600 mA 2170.0 MHz) Min Typ Max Unit — 12 — dB — 34 — % — — dBc — 11.5 — dB — 46 — % MRF21125R3 MRF21125SR3 3 ...

Page 4

... Table 5. MRF21125 Test Circuit Component Designations and Values Designators B1 C1 C2, C4, C11, C12 C3, C7 C5, C14 C10 C13 C15 C16 MRF21125R3 MRF21125SR3 DUT Z8 Z9 Z10 Z11 Z12 Z13 PCB Figure 1. MRF21125 Test Circuit Schematic Description Ferrite Bead (Square), Fair Rite #2743019447 9 ...

Page 5

... PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21125 Test Circuit Component Layout RF Device Data Freescale Semiconductor C9 C10 C11 W1 R4 C13 C12 C14 C15 C16 MRF21125 Rev 5 MRF21125R3 MRF21125SR3 5 ...

Page 6

... P , OUTPUT POWER (WATTS) PEP out Figure 7. Intermodulation Distortion versus Output Power MRF21125R3 MRF21125SR3 6 TYPICAL CHARACTERISTICS Vdc Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW 25 Peak/Avg 0.01% Probability (CCDF +IM3 in 3 ...

Page 7

... W (Avg.), 2−Carrier W−CDMA DQ out source load MHz Ω Ω 2110 3.81 - j6.86 1.56 - j1.58 2140 4.33 - j7.90 1.53 - j1.90 2170 4.84 - j8.46 1.48 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Test Matching Network Z Z source load Output Matching Network MRF21125R3 MRF21125SR3 7 ...

Page 8

... MRF21125R3 MRF21125SR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF21125R3 MRF21125SR3 9 ...

Page 10

... MRF21125R3 MRF21125SR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... E 0.035 0.045 0.89 F 0.003 0.006 0.08 H 0.057 0.067 1.45 K 0.170 0.210 4.32 M 0.872 0.888 22.15 N 0.871 0.889 19.30 R 0.515 0.525 13.10 S 0.515 0.525 13.10 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF21125R3 MRF21125SR3 MAX 23.24 13.80 5.08 12.83 1.14 0.15 1.70 5.33 22.55 22.60 13.30 13.30 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF21125R3 MRF21125SR3 Document Number: MRF21125 Rev. 9, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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