mrf21120r6 Freescale Semiconductor, Inc, mrf21120r6 Datasheet

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mrf21120r6

Manufacturer Part Number
mrf21120r6
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for W- CDMA base station applications with frequencies from 2110
Output Power
Derate above 25°C
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 375D - 05, STYLE 1
2110 - 2170 MHz, 120 W, 28 V
Document Number: MRF21120
LATERAL N - CHANNEL
MRF21120R6
RF POWER MOSFET
NI - 1230
M3 (Minimum)
1 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
2.22
0.45
389
150
200
Rev. 11, 5/2006
MRF21120R6
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf21120r6 Summary of contents

Page 1

... MHz, 120 LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1230 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 389 W D 2.22 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 0.45 °C/W θJC Class 1 (Minimum) M3 (Minimum) MRF21120R6 1 ...

Page 2

... Input Return Loss ( Vdc 120 W PEP out 2110.0 MHz 2110.1 MHz) 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Device measured in push - pull configuration. MRF21120R6 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I GSS I DSS ...

Page 3

... Vdc 120 W CW out 2170.0 MHz) 1. Device measured in push - pull configuration. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol (1) (continued) P1dB 1000 mA, η = 1000 mA, Min Typ Max Unit — 120 — W — 10.5 — dB — 42 — % MRF21120R6 3 ...

Page 4

... W Fixed Metal Film Resistors, Dale R3, R4 270 Ω, 1/8 W Fixed Film Chip Resistors, Dale R5, R6 1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale Z1 0.150″ x 0.080″ Microstrip Figure 1. 2110 - 2200 MHz Broadband Test Circuit Schematic MRF21120R6 4 C17 C16 C14 + C15 C13 ...

Page 5

... C13 C20 R4 C23 C37 226 C21 C38 35K C24 C39 649 C22 C35 C34 649 35K 226 V C31 DD C32 C33 C28 C27 C9 C11 C10 C12 L4 C36 C41 C43 C40 V DD 226 35K 649 C42 C44 MRF21120R6 ...

Page 6

... 1000 2170 MHz ACPR DOWN 4 ACPR OUTPUT POWER (WATTS) AVG. out Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W - CDMA) MRF21120R6 6 TYPICAL CHARACTERISTICS −20 −30 −40 600 mA − Vdc 2170.0 MHz − 2170.1 MHz 100 0.10 Figure 4 ...

Page 7

... MHz Ω Ω 2110 3.7 - j2.0 4.9 - j2.8 2140 3.5 - j2.4 5.1 - j2.7 2170 3.1 - j2.5 5 Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Under + − Test − source load Z load Output Matching Network MRF21120R6 7 ...

Page 8

... MRF21120R6 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF21120R6 9 ...

Page 10

... MRF21120R6 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... 0.117 0.137 2.97 L 0.540 BSC 13.72 BSC M 1.219 1.241 30.96 N 1.218 1.242 30. 0.120 0.130 3.05 R 0.355 0.365 9.01 S 0.365 0.375 9.27 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF21120R6 MAX 41.28 10.29 5.08 11.81 1.68 0.18 2.29 3.48 31.52 31.55 3.30 9.27 9.53 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF21120R6 Document Number: MRF21120 Rev. 11, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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