mrf21085lr3 Freescale Semiconductor, Inc, mrf21085lr3 Datasheet

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mrf21085lr3

Manufacturer Part Number
mrf21085lr3
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for W- CDMA base station applications with frequencies from 2110
P
MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
40μ″ Nominal.
Derate above 25°C
out
Power Gain — 13.6 dB
Drain Efficiency — 23%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
= 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 28 Volts, I
DQ
= 1000 mA,
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465 - 06, STYLE 1
MRF21085LSR3
CASE 465A - 06, STYLE 1
Document Number: MRF21085
2110 - 2170 MHz, 90 W, 28 V
MRF21085LR3
MRF21085LR3
LATERAL N - CHANNEL
MRF21085LR3 MRF21085LSR3
RF POWER MOSFETs
NI - 780
MRF21085LSR3
M3 (Minimum)
1 (Minimum)
- 65 to +150
NI - 780S
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.28
0.78
224
150
200
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf21085lr3 Summary of contents

Page 1

... MHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF21085LR3 CASE 465A - 06, STYLE 780S MRF21085LSR3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc 224 W D 1.28 W/° +150 °C 150 °C C 200 °C J Value Unit 0.78 °C/W Class 1 (Minimum) M3 (Minimum) MRF21085LR3 MRF21085LSR3 1 ...

Page 2

... MHz MHz and f2 +5 MHz.) Input Return Loss ( Vdc Avg 1000 mA 2112.5 MHz, DD out 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) 1. Part is internally matched both on input and output. MRF21085LR3 MRF21085LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...

Page 3

... Vdc 1000 mA 2170 MHz Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η IMD IRL P1dB Min Typ Max Unit — 13.6 — dB — 36 — % — — dBc — — dB — 100 — W MRF21085LR3 MRF21085LSR3 3 ...

Page 4

... Microstrip Table 5. MRF21085 Test Circuit Component Designations and Values Designators B1 C1 C3, C9 C4, C10 C11, C12 L1 N1 R3, R4 MRF21085LR3 MRF21085LSR3 DUT Board PCB Figure 1. MRF21085L Test Circuit Schematic Short Ferrite Bead, Fair Rite, #2743019447 ...

Page 5

... Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21085L Test Circuit Component Layout RF Device Data Freescale Semiconductor WB1 WB2 C8 C10 R4 C11 C12 C6 MRF21085 Rev 3 MRF21085LR3 MRF21085LSR3 5 ...

Page 6

... OUTPUT POWER (WATTS) PEP out Figure 5. Third Order Intermodulation Distortion versus Output Power 14 13.5 13 η 12 OUTPUT POWER (WATTS) out Figure 7. CW Performance MRF21085LR3 MRF21085LSR3 6 TYPICAL CHARACTERISTICS −25 −25 η Vdc DD − 1000 mA −30 DQ IM3 f1 = 2135 MHz − 2145 MHz −35 − ...

Page 7

... MHz BW −70 − −25 −20 −15 −10 Figure 12. 2-Carrier W-CDMA Spectrum −10 −15 −20 −25 −30 −35 −40 2140 2155 2170 2185 f, FREQUENCY (MHz) 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW − FREQUENCY (MHz) MRF21085LR3 MRF21085LSR3 7 ...

Page 8

... Z Z Input Matching Network Figure 13. Series Equivalent Source and Load Impedance MRF21085LR3 MRF21085LSR3 2170 MHz Z load f = 2110 MHz f = 2170 MHz Z source f = 2110 MHz 1000 mA Avg out source load MHz Ω Ω 2110 1.10 - j3.71 1.23 - j2.10 2140 1.11 - j3.57 1.26 - j1.92 2170 1 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF21085LR3 MRF21085LSR3 9 ...

Page 10

... MRF21085LR3 MRF21085LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... M U − − − 0.040 − − − S (INSULATOR) Z − − − 0.030 − − − aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF21085LR3 MRF21085LSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF21085LR3 MRF21085LSR3 Document Number: MRF21085 Rev. 9, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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