mrf9210

Manufacturer Part Numbermrf9210
DescriptionRf Power Field Effect Transistor N-channel Enhancement-mode Lateral Mosfet
ManufacturerFreescale Semiconductor, Inc
mrf9210 datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre‐
quencies from 865 to 895 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: -46.2 dBc in 30 kHz BW
1.98 MHz: -60 dBc in 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• Device Designed for Push-Pull Operation Only
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF9210
= 1900 mA
DQ
LATERAL N-CHANNEL
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Symbol
R
θJC
Rev. 6, 9/2008
MRF9210R3
880 MHz, 200 W, 26 V
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Value
Unit
- 0.5, +65
Vdc
- 0.5, +15
Vdc
565
W
3.2
W/°C
°C
- 65 to +150
°C
150
°C
200
(1)
Value
Unit
°C/W
0.31
Class
1 (Minimum)
M3 (Minimum)
C5 (Minimum)
MRF9210R3
1

mrf9210 Summary of contents

  • Page 1

    ... Human Body Model Machine Model Charge Device Model 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF9210 = 1900 mA DQ LATERAL N-CHANNEL Symbol V DSS V ...

  • Page 2

    ... MHz and 895 MHz) 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push-pull configuration. 4. Drains are tied together internally as this is a total device value. MRF9210R3 2 = 25°C unless otherwise noted) C Symbol (4) ...

  • Page 3

    ... Inductor (0603 Inductor L3, L4 12.5 nH Inductors L5 Inductors (0603) 24 Ω, 1/4 W Chip Resistors R1, R2 MRF9210 Gate V GG C23 Balun 1 C1 C24 V GG Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐ logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product ...

  • Page 4

    ... Order -6 0 5th Order -7 0 7th Order - OUTPUT POWER (WATTS) PEP out Figure 5. Intermodulation Distortion Products versus Output Power MRF9210R3 4 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.) out I = 1900 mA DQ IRL N-CDMA IS-95 Pilot, Sync, Paging ...

  • Page 5

    ... FREQUENCY (MHz) MRF9210R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 6

    ... Z Z Input Matching Network Figure 11. Series Equivalent Source and Load Impedance MRF9210R3 895 MHz 1900 mA Avg out source load Ω Ω MHz 865 4.19 - j6.71 8.43 - j3.83 880 3.69 - j6.18 8.12 - j3.85 895 3.17 - j5.85 7.84 - j4.08 = Test circuit impedance as measured from source gate to gate, balanced configuration. ...

  • Page 7

    ... BSC H 0.097 0.107 2.46 J 0.2125 BSC 5.397 BSC K 0.135 0.165 3.43 L 0.425 BSC 10.8 BSC M 0.852 0.868 21.64 N 0.851 0.869 21.62 Q 0.118 0.138 3.00 R 0.395 0.405 10.03 S 0.394 0.406 10.01 bbb 0.010 REF 0.25 REF SEATING T ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF9210R3 MAX 34.16 9.91 5.69 8.51 1.78 0.15 2.72 4.19 22.05 22.07 3.30 10.29 10.31 7 ...

  • Page 8

    ... Data sheet archived. Part no longer manufactured. 6 Dec. 2009 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers • Added Product Documentation and Revision History MRF9210R3 8 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

  • Page 9

    ... Denver, Colorado 80217 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF9210 Rev. 6, 9/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...