mrf9210 Freescale Semiconductor, Inc, mrf9210 Datasheet - Page 2

• Manufacturer Part Number: mrf9210
• Description: Rf Power Field Effect Transistor N-channel Enhancement-mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

MRF9210R3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
PAR = 9.8 dB @ 0.01% Probability on CCDF
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Forward Transconductance
Reverse Transfer Capacitance
N-CDMA Common-Source Amplifier Power Gain
N-CDMA Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
N-CDMA Common-Source Amplifier Power Gain
N-CDMA Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
f = 880 MHz)
(V
f = 880 MHz)
(V
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
(V
f = 880 MHz)
(V
f = 865 MHz and 895 MHz)
(V
f = 865 MHz and 895 MHz)
(V
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
(V
f = 865 MHz and 895 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
(3)
DS
D
D
D
D
(1)
GS
GS
(In Freescale Test Fixture, 50 ohm system) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
out
out
out
out
out
out
out
out
= 330 μAdc)
= 1900 mAdc)
= 6.7 Adc)
= 2.2 Adc)
= 0)
= 0)
= 0)
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
= 40 W Avg. N-CDMA, I
(1)
(3)
(1,2)
(1)
Characteristic
(1)
(T
C
(4)
(4)
= 25°C unless otherwise noted)
GS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
= 0 Vdc)
= 1900 mA,
= 1900 mA,
= 1900 mA,
= 1900 mA,
= 1900 mA,
= 1900 mA,
= 1900 mA,
= 1900 mA,
Symbol
V
V
V
ACPR
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
G
IRL
IRL
DSS
DSS
GSS
g
η
η
rss
fs
ps
ps
15.8
Min
1.5
2.5
—
—
—
—
—
—
23
—
—
—
—
—
9
-46.2
-47.5
16.5
25.5
17.5
16.5
25.5
Typ
2.8
3.3
0.2
8.8
3.6
15
—
—
—
Freescale Semiconductor
Max
-45
4.5
0.4
10
—
—
—
—
—
—
—
—
—
1
1
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
pF
%
%
S