mrf9210 Freescale Semiconductor, Inc, mrf9210 Datasheet - Page 4

• Manufacturer Part Number: mrf9210
• Description: Rf Power Field Effect Transistor N-channel Enhancement-mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

MRF9210R3
4
17.5
16.5
15.5
14.5
-1 0
-2 0
-3 0
-4 0
-5 0
-6 0
-7 0
-8 0
-90
17
16
15
1
1
Figure 5. Intermodulation Distortion Products
V
f1 = 879.95 MHz, f2 = 880.05 MHz
Figure 3. Power Gain versus Output Power
3rd Order
5th Order
7th Order
DD
I
1900 mA
1600 mA
1300 mA
DQ
= 26 Vdc, I
= 2200 mA
P
P
out
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 1900 mA
10
10
18
17
16
15
14
13
12
10
11
9
8
860
V
f1 = 879.95 MHz, f2 = 880.05 MHz
DD
= 26 Vdc
Figure 2. Class AB Broadband Circuit
865
G
η
IRL
ACPR
ps
870
TYPICAL CHARACTERISTICS
100
100
f, FREQUENCY (MHz)
Performance
875
V
P
I
N-CDMA IS-95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
DQ
DD
out
880
= 1900 mA
= 26 Vdc
= 40 W (Avg.)
885
22
20
18
16
14
12
10
1
890
Figure 6. Power Gain and Efficiency versus
-2 0
-3 0
-4 0
-5 0
-6 0
-70
G
η
ps
1
V
f1 = 879.95 MHz, f2 = 880.05 MHz
Figure 4. Intermodulation Distortion versus
895
I
1600 mA
DQ
DD
P
= 1300 mA
= 26 Vdc
out
, OUTPUT POWER (WATTS) AVG.
900
30
28
26
24
22
-30
-35
-40
-45
-50
-55
P
Output Power
out
, OUTPUT POWER (WATTS) PEP
10
Output Power
-10
-15
-20
-25
-30
-35
10
1900 mA
2200 mA
Freescale Semiconductor
V
I
f = 880 MHz
DQ
DD
= 1900 mA
= 26 Vdc
100
RF Device Data
100
60
50
40
30
20
10
0