mrf9100l Freescale Semiconductor, Inc, mrf9100l Datasheet

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mrf9100l

Manufacturer Part Number
mrf9100l
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number
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Price
Part Number:
MRF9100L
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 26 volt base station equipment.
• On - Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for GSM and EDGE base station applications with frequencies
100 Watts CW Output Power
40μ″ Nominal.
Derate above 25°C
Output Power, P1dB — 110 Watts
Power Gain @ P1dB — 16.5 dB
Efficiency @ P1dB — 53%
C
= 25°C
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF9100LR3
Document Number: MRF9100
MRF9100LSR3
MRF9100LSR3
LATERAL N - CHANNEL
MRF9100LR3
900 MHz, 110 W, 26 V
RF POWER MOSFETs
NI - 780
NI - 780S
MRF9100LR3 MRF9100LSR3
- 65 to +150
- 0.5. +65
- 0.5. +15
Value
Value
GSM/EDGE
175
150
200
1.0
1.0
Rev. 5, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf9100l Summary of contents

Page 1

... RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF9100LR3 CASE 465A - 06, STYLE 780S MRF9100LSR3 Symbol Value Unit V - 0.5. +65 DSS V - 0.5. + 175 D 1.0 W/° +150 stg T 150 C T 200 J Symbol Value Unit R 1.0 °C/W θJC MRF9100LR3 MRF9100LSR3 Vdc Vdc W °C °C °C 1 ...

Page 2

... MHz) Third Order Intermodulation Distortion ( Vdc 100 W PEP out Full GSM Band 921 - 960 MHz, Tone Spacing = 100 kHz) 1. Part is internally matched both on input and output. MRF9100LR3 MRF9100LSR3 2 = 25°C, 50 ohm system unless otherwise noted) C Symbol I DSS I DSS I ...

Page 3

... INPUT Table 5. MRF9100L Test Circuit Component Designations and Values Designators C1, C13 22 pF, 100B Chip Capacitors, ATC #100B220GW C2, C12 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW C3 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW C4 pF, 100B Chip Capacitors, ATC #100B100GW C6, C14 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9100L Test Circuit Component Layout MRF9100LR3 MRF9100LSR3 4 ...

Page 5

... INPUT Device Data Freescale Semiconductor + C1 C13 C10 Figure 3. MRF9100L Demo Board Schematic C14 C4 Z11 RF OUTPUT Z9 Z10 Z12 Z13 C12 C11 MRF9100LR3 MRF9100LSR3 5 ...

Page 6

... Z10 0.198″ x 0.042″ Microstrip Z11 0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip Z12 0.181″ x 0.042″ Microstrip Z13 0.282″ x 0.042″ Microstrip Substrate Taconic RF35, Thickness 0.5 mm, ε MRF9100LR3 MRF9100LSR3 6 Description = 3 Device Data Freescale Semiconductor ...

Page 7

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MRF9100L Demo Board Component Layout RF Device Data Freescale Semiconductor ...

Page 8

... 800 945 MHz 6 η EVM OUTPUT POWER (WATTS) AVG. out Figure 9. EVM and Efficiency versus Output Power MRF9100LR3 MRF9100LSR3 8 TYPICAL CHARACTERISTICS 160 865 MHz 140 η 120 100 Vdc 920 MHz T = 25_C ...

Page 9

... Z Z source load MHz Ω Ω 840 2.04 - j0.57 1.62 + j1.65 880 2.20 - j0.16 1.88 + j2.45 920 2.00 + j0.44 1.79 + j2.40 960 2.16 + j0.25 1.47 + j1.82 1000 2.62 + j0.25 1.58 + j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Test Matching Network Z Z source load Output Matching Network MRF9100LR3 MRF9100LSR3 9 ...

Page 10

... MRF9100LR3 MRF9100LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− F aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9100LR3 MRF9100LSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 MAX 20.70 9.91 4.32 12.83 1.14 0.15 1.70 5.33 20.02 20.02 9.53 9.52 1 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9100LR3 MRF9100LSR3 Document Number: MRF9100 Rev. 5, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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