mrf9030 Freescale Semiconductor, Inc, mrf9030 Datasheet

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mrf9030

Manufacturer Part Number
mrf9030
Description
N - Channel Enhancement - Mode Lateral Mosfet
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
MRF9030LSR1
Document Number: MRF9030
LATERAL N - CHANNEL
CASE 360C - 05, STYLE 1
945 MHz, 30 W, 26 V
RF POWER MOSFET
M1 (Minimum)
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +68
- 0.5, + 15
Value
Value
Class
0.67
117
150
200
1.5
NI - 360S
Rev. 7, 9/2008
MRF9030LSR1
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf9030 Summary of contents

Page 1

... Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF9030 Rev. 7, 9/2008 MRF9030LSR1 945 MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360C - 05, STYLE 1 ...

Page 2

... Adc Dynamic Characteristics Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz MRF9030LSR1 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V ...

Page 3

... 250 mA, η = 250 mA, IMD = 250 mA, IRL = 250 mA, P 1dB G ps η Min Typ Max 18 19 — 37 41.5 — — — — 19 — — 41.5 — — — — — — 30 — — 19 — — 60 — MRF9030LSR1 Unit dB % dBc dBc ...

Page 4

... Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic 0300, 30 mil, ε = 3.55 r C17 V DD C15 C16 C13 RF OUTPUT C12 MRF9030 900 MHz Rev−02 RF Device Data Freescale Semiconductor RF ...

Page 5

... I = 200 mA DQ 250 mA 300 mA 375 100 P , OUTPUT POWER (WATTS) PEP out Output Power G ps η OUTPUT POWER (WATTS) AVG. out Output Power MRF9030LSR1 100 5 ...

Page 6

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I Figure 9. MTTF Factor versus Junction Temperature MRF9030LSR1 6 TYPICAL CHARACTERISTICS Vdc η ...

Page 7

... DD DQ out source load MHz Ω Ω 930 1.34 - j0.1 3.175 + j0.09 945 1.36 - j0.2 3.1 + j0.08 960 1.4 - j0.14 3.0 + j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF9030LSR1 7 ...

Page 8

... (INSULATOR) aaa CASE 360C - 05 ISSUE 360S MRF9030LSR1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A ...

Page 9

... The following table summarizes revisions to this document. Revision Date 7 Sept. 2008 • Data sheet revised to reflect part status change including use of applicable overlay. • Data sheet archived. Parts no longer manufactured. • Added Revision History Device Data Freescale Semiconductor REVISION HISTORY Description MRF9030LSR1 9 ...

Page 10

... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9030LSR1 Document Number: MRF9030 Rev. 7, 9/2008 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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