mrf9030r1 Freescale Semiconductor, Inc, mrf9030r1 Datasheet

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mrf9030r1

Manufacturer Part Number
mrf9030r1
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
©
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
REV 2
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
C
C
= 25°C
= 25°C
Test Conditions
Characteristic
Rating
MRF9030R1
MRF9030SR1
MRF9030R1
MRF9030SR1
Symbol
Symbol
V
R
V
T
P
P
DSS
T
θJC
GS
stg
D
D
J
MRF9030SR1
MRF9030R1
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 360B–05, STYLE 1
CASE 360C–05, STYLE 1
945 MHz, 30 W, 26 V
M1 (Minimum)
1 (Minimum)
–65 to +200
MRF9030R1 MRF9030SR1
BROADBAND
–0.5, +15
MRF9030SR1
Class
Value
MRF9030R1
0.53
0.67
Max
200
117
1.9
1.5
68
92
NI–360S
NI–360
Order this document
by MRF9030/D
Watts
Watts
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf9030r1 Summary of contents

Page 1

... Symbol Value V 68 DSS V –0.5, +15 GS MRF9030R1 0.53 MRF9030SR1 P 117 D 0.67 T –65 to +200 stg T 200 J Class 1 (Minimum) M1 (Minimum) Symbol Max MRF9030R1 R 1.9 θJC MRF9030SR1 1.5 MRF9030R1 MRF9030SR1 Order this document by MRF9030/D NI–360 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C Unit °C/W 1 ...

Page 2

... DYNAMIC CHARACTERISTICS Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance = 26 Vdc ± 30 mV(rms) MHz MRF9030R1 MRF9030SR1 2 = 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — GSS ...

Page 3

... G — ps η — 41.5 IMD — –33 IRL — –14 P — 1dB G — ps η — Ψ No Degradation In Output Power Max Unit 19 — dB — % –28 dBc – — dB — % — dBc — — — — % MRF9030R1 MRF9030SR1 3 ...

Page 4

... Surface Mount Inductors Z1 0.260″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Figure 1. 945 MHz Broadband Test Circuit Schematic Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030R1 MRF9030SR1 4 Z3 0.500″ x 0.100″ Microstrip Z4 0.215″ x 0.270″ Microstrip Z5 0.315″ ...

Page 5

... Figure 3. Class AB Broadband Circuit Performance Figure 4. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 5. Intermodulation Distortion versus Figure 7. Power Gain and Efficiency versus Output Power η Output Power MRF9030R1 MRF9030SR1 5 ...

Page 6

... Figure 8. Power Gain, Efficiency and IMD MRF9030R1 MRF9030SR1 6 η versus Output Power MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω MHz Ω Ω 930 1.34 – j0.1 3.175 + j0.09 945 1.36 – j0.2 3.1 + j0.08 960 1.4 – j0.14 3.0 + j0.05 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF9030R1 MRF9030SR1 7 ...

Page 8

... MRF9030R1 MRF9030SR1 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9030R1 MRF9030SR1 9 ...

Page 10

... MRF9030R1 MRF9030SR1 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 360C–05 ISSUE D NI–360S MRF9030SR1 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF9030R1 MRF9030SR1 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9030R1 MRF9030SR1 ◊ 12 MOTOROLA RF DEVICE DATA ...

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