mrf9060l Freescale Semiconductor, Inc, mrf9060l Datasheet - Page 6

• Manufacturer Part Number: mrf9060l
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF9060LR1 MRF9060LSR1
−70
−10
−20
−30
−40
−50
−60
17.5
16.5
15.5
0
18
17
16
15
0.1
Figure 6. Intermodulation Distortion Products
V
I
f1 = 945 MHz
f2 = 945.1 MHz
DQ
I
DQ
DD
Figure 4. Power Gain versus Output Power
275 mA
= 450 mA
= 26 Vdc
= 650 mA
450 mA
500 mA
P
out
1
, OUTPUT POWER (WATTS) PEP
P
versus Output Power
out
1
, OUTPUT POWER (WATTS) PEP
3rd Order
5th Order
10
18
17
16
15
14
13
12
10
11
Figure 3. Class AB Broadband Circuit Performance
930
10
G
IMD
7th Order
IRL
h
ps
935
TYPICAL CHARACTERISTICS
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
100
= 26 Vdc
100
940
V
P
I
Two−Tone Measurement,
100 kHz Tone Spacing
DQ
DD
out
f, FREQUENCY (MHz)
= 450 mA
= 26 Vdc
= 60 W (PEP)
945
20
18
16
14
12
10
8
−20
−25
−30
−35
−40
−45
−50
−55
−60
950
Figure 5. Intermodulation Distortion versus
Figure 7. Power Gain and Efficiency versus
I
DQ
450 mA
= 275 mA
955
P
out
1
P
, OUTPUT POWER (WATTS) AVG.
out
10
, OUTPUT POWER (WATTS) PEP
960
G
650 mA
Output Power
ps
h
Output Power
50
45
40
35
−30
−32
−34
−36
−38
500 mA
10
Freescale Semiconductor
−10
−12
−14
−16
−18
V
I
f = 945 MHz
DQ
DD
= 450 mA
= 26 Vdc
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
RF Device Data
100
= 26 Vdc
100
60
50
40
30
20
10
0