mrf8hp21080hr3 Freescale Semiconductor, Inc, mrf8hp21080hr3 Datasheet

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mrf8hp21080hr3

Manufacturer Part Number
mrf8hp21080hr3
Description
Rf Power Field Effect Transistors N--channel Enhancement--mode Lateral Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
• Typical P
Features
• Advanced High Performance In--Package Doherty
• Production Tested in a Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Designed for W--CDMA and LTE base station applications with frequencies
1. P3dB = P
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Source S--Parameters
Operation
13 inch Reel. For R5 Tape and Reel option, see p. 13.
13 inch Reel. For R5 Tape and Reel option, see p. 13.
DQA
Derate above 25°C
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
calculators by product.
= 150 mA, V
Frequency
2110 MHz
2140 MHz
2170 MHz
out
avg
@ 3 dB Compression Point ≃ 100 Watts
+ 7.0 dB where P
C
GSB
= 25°C
= 1.1 Vdc, P
(dB)
14.1
14.5
14.4
G
ps
(2,3)
avg
Rating
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
out
46.7
46.2
45.7
(%)
η
= 16 Watts Avg., IQ Magnitude
D
Output PAR
(dB)
8.3
8.2
8.1
out
)
(1)
DD
ACPR
(dBc)
--30.6
--32.1
--33.6
= 28 Volts,
Symbol
Document Number: MRF8HP21080H
V
MRF8HP21080HR3 MRF8HP21080HSR3
V
V
T
CW
T
DSS
T
RF
RF
stg
GS
DD
C
J
CASE 465H- -02, STYLE 1
MRF8HP21080HSR3
CASE 465M- -01, STYLE 1
inA
2110- -2170 MHz, 16 W AVG., 28 V
inB
MRF8HP21080HR3
MRF8HP21080HSR3
/V
/V
MRF8HP21080HR3
Figure 1. Pin Connections
GSA
GSB
LATERAL N- -CHANNEL
NI- -780S- -4
RF POWER MOSFETs
NI- -780- -4
3
4
W- -CDMA, LTE
--65 to +150
(Top View)
--0.5, +65
--6.0, +10
Peaking
Carrier
32, +0
Value
150
225
220
3.3
Rev. 0, 6/2011
1
2 RF
RF
outA
outB
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
/V
/V
DSA
DSB
1

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mrf8hp21080hr3 Summary of contents

Page 1

... inB GSB outB Peaking (Top View) Figure 1. Pin Connections Symbol Value Unit V --0.5, +65 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 ° 220 W 3.3 W/°C MRF8HP21080HR3 MRF8HP21080HSR3 DSA DSB 1 ...

Page 2

... Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Doherty configuration. MRF8HP21080HR3 MRF8HP21080HSR3 2 = 150 mA 1.1 Vdc, 2170 MHz DQA ...

Page 3

... ACPR η D (%) (dB) (dBc) 46.7 8.3 --30.6 46.2 8.2 --32.1 45.7 8.1 --33.6 = 150 mA 1.1 Vdc, DQA GSB Min Typ Max — 60 — — 100 — — 40 — — 78 — — 0.4 — — 0.012 — — 0.01 — MRF8HP21080HR3 MRF8HP21080HSR3 = 1.1 Vdc, IRL (dB) --17 --17 --18 Unit W W MHz MHz dB dB/°C dB/°C 3 ...

Page 4

... GSA GSB R3 *C7, C8, C19 and C20 are mounted vertically. Figure 2. MRF8HP21080HR3(HSR3) Test Circuit Component Layout Table 5. MRF8HP21080HR3(HSR3) Test Circuit Component Designations and Values Part B1 Ω Ferrite Beads C1, C2 1.6 pF Chip Capacitors C3, C4, C5, C6, C15, C16, 10 μ Chip Capacitors C17, C18 C7*, C8*, C9, C10, C13, 6 ...

Page 5

... P , OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power η --26 --1.6 --28 --1.8 --30 --2 --32 --2.2 ACPR --34 --2.4 --36 --2.6 2200 2220 100 -- --20 η D --25 40 ACPR --30 30 --35 20 --40 10 PARC -- MRF8HP21080HR3 MRF8HP21080HSR3 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 9 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8HP21080HR3 MRF8HP21080HSR3 6 TYPICAL CHARACTERISTICS Vdc 150 mA DQA GSB Single--Carrier W--CDMA 2170 MHz 2140 MHz ...

Page 7

... Max Drain Efficiency P1dB (1) Z load (Ω) (dBm) (W) η D 14.3 -- j9.22 45.6 36 65.1 14.4 -- j9.52 45.5 36 64.2 13.8 -- j8.09 45.6 36 63.9 Input Device Load Pull Under Tuner Test Z Z source load P3dB (%) (dBm) (W) (%) η D 48.0 63 57.4 48.0 63 56.0 47.9 62 56.1 Output Load Pull Tuner P3dB (%) (dBm) (W) (%) η D 46.7 47 65.9 46.7 47 65.1 46.6 46 65.9 Output Load Pull Tuner MRF8HP21080HR3 MRF8HP21080HSR3 7 ...

Page 8

... Load impedance for optimum P1dB efficiency Impedance as measured from gate contact to ground. source Z = Impedance as measured from drain contact to ground. load Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning MRF8HP21080HR3 MRF8HP21080HSR3 Vdc 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle GSB Max Output Power P1dB (1) ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8HP21080HR3 MRF8HP21080HSR3 9 ...

Page 10

... MRF8HP21080HR3 MRF8HP21080HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8HP21080HR3 MRF8HP21080HSR3 11 ...

Page 12

... MRF8HP21080HR3 MRF8HP21080HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... MRF8HP21080H and MRF8HP21080HS in the R3 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 June 2011 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor R5 TAPE AND REEL OPTION REVISION HISTORY Description MRF8HP21080HR3 MRF8HP21080HSR3 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8HP21080HR3 MRF8HP21080HSR3 Document Number: MRF8HP21080H Rev. 0, 6/2011 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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