mrf5583 Freescale Semiconductor, Inc, mrf5583 Datasheet

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mrf5583

Manufacturer Part Number
mrf5583
Description
Pnp Silicon High-frequency Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
PNP Silicon
High-Frequency Transistor
. . . designed for amplifier, oscillator or frequency multiplier applications in
industrial equipment. Suitable for use as a Class A, B or C output driver or
pre–driver stages in VHF and UHF.
REV 6
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Operating and Storage Junction
MRF5583 = 5583
Total Device Dissipation @ T A = 25 C
Storage Temperature
Thermal Resistance, Junction to Ambient
Collector–Emitter Breakdown Voltage (I C = –10 mA)
Collector–Base Breakdown Voltage (I C = –10 A)
Emitter–Base Breakdown Voltage (I E = –100 A)
Collector Cutoff Current (V CB = – 20 V)
Emitter Cutoff Current (V EB = – 2.0 V)
DC Current Gain (I C = – 40 mA, V CE = – 2.0 V)
DC Current Gain
DC Current Gain
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = –10 mA)
Base–Emitter On Voltage (I C = –100 mA, V CE = – 2.0 V)
Current–Gain — Bandwidth Product
Insertion Gain (V CE = –15 V, I C = – 35 mA, f = 250 MHz)
Motorola, Inc. 1994
Low Cost SORF Plastic Surface Mount Package
Guaranteed RF Specification — |S 21 | 2
S–Parameter Characterization
Tape and Reel Packaging Options Available by adding suffix:
Temperature Range
Derate above 25 C
(I C = – 35 mA, V CE = –15 V, f = 100 MHz)
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
(I C = –100 mA, V CE = – 2.0 V)
(I C = – 300 mA, V CE = – 5.0 V)
Rating
Characteristic
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
T J , T stg
V CEO
V CBO
V EBO
I C
– 55 to +150
Value
– 500
– 3.0
– 30
– 30
V (BR)CEO
V (BR)CBO
V (BR)EBO
V CE(sat)
V BE(on)
Symbol
|S 21 | 2
I CBO
I EBO
h FE
Unit
mA
f T
V
V
V
C
Symbol
R JA
T stg
– 30
– 30
12.5
Min
P D
– 3
20
25
15
CASE 751–05, STYLE 1
MRF5583
2100
15.5
Typ
HIGH–FREQUENCY
SURFACE MOUNT
TRANSISTOR
I C = – 500 mA
PNP SILICON
Max
150
125
1.0
8.0
(SO–8)
Order this document
– 1.0
– 0.5
Max
100
0.8
1.8
by MRF5583/D
MRF5583
mW/ C
Unit
Watt
MHz
Unit
C/W
dB
V
V
V
V
V
C
A
A
1

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mrf5583 Summary of contents

Page 1

... Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Operating and Storage Junction Temperature Range DEVICE MARKING MRF5583 = 5583 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation @ Derate above 25 C Storage Temperature Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS ( unless otherwise noted ...

Page 2

... (Volts) (mA) (MHz –15 – 0.47 30 0.59 50 0.63 70 0.64 100 0.65 300 0.67 500 0.67 700 0.67 1000 0.66 Table 1. Common Emitter S–Parameters MRF5583 – 57 64.7 155 0.01 – 116 42.2 126 0.02 – 140 28.8 113 0.02 – 151 21.4 105 0.02 – 161 15.4 97 0.02 179 5.23 79 0.05 168 3 ...

Page 3

... EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER CASE 751–05 ISSUE M MILLIMETERS INCHES MIN MAX MIN MAX 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27 BSC 0.050 BSC 0.18 0.25 0.007 0.009 0.10 0.25 0.004 0.009 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 MRF5583 3 ...

Page 4

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF5583 4 *MRF5583/D* MRF5583/D MOTOROLA RF DEVICE DATA ...

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