mrf5s4140h

Manufacturer Part Numbermrf5s4140h
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf5s4140h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 400 to 500 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 28-volt base station equipment.
• Typical Single- Carrier N - CDMA Performance @ 465 MHz: V
I
= 1250 mA, P
= 28 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
DQ
out
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73°C, 140 W CW
Case Temperature 74°C, 28 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts,
DD
Operation
DD
″ Nominal.
μ
Document Number: MRF5S4140H
Rev. 2, 5/2006
MRF5S4140HR3
MRF5S4140HSR3
465 MHz, 28 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S4140HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S4140HSR3
Symbol
Value
Unit
V
- 0.5, +65
Vdc
DSS
V
- 0.5, +15
Vdc
GS
P
427
W
D
2.4
W/°C
T
- 65 to +150
°C
stg
T
150
°C
C
T
200
°C
J
(1,2)
Symbol
Value
Unit
R
°C/W
θJC
0.41
0.47
MRF5S4140HR3 MRF5S4140HSR3
1

mrf5s4140h Summary of contents

  • Page 1

    ... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, DD Operation DD ″ Nominal. μ Document Number: MRF5S4140H Rev. 2, 5/2006 MRF5S4140HR3 MRF5S4140HSR3 465 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 ...

  • Page 2

    ... MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF5S4140HR3 MRF5S4140HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

  • Page 3

    ... Z9 1.000″ x 0.226″ Microstrip Z10 0.498″ x 0.630″ Microstrip Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460 - 470 MHz Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460 - 470 MHz Part B1, B2 Ferrite Beads, Short C1, C14 120 pF Chip Capacitors C2, C13 0 ...

  • Page 4

    ... C18 Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 4 450 MHz Rev. 0 Ver C10 C22 + C19 C20 C21 C17 C16 C15 C11 C12 C14 C13 RF Device Data Freescale Semiconductor ...

  • Page 5

    ... Vdc 465 MHz 467.5 MHz 1850 mA 1550 mA = 650 mA DQ 950 mA 1250 mA 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF5S4140HR3 MRF5S4140HSR3 400 5 ...

  • Page 6

    ... Figure 7. Intermodulation Distortion Products versus Output Power Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain MRF5S4140HR3 MRF5S4140HSR3 −10 (f1 + f2)/2 = Center Frequency of 465 MHz −20 −30 −40 −50 100 200 0.1 Figure 8. Intermodulation Distortion Products P6dB = 53 ...

  • Page 7

    ... Figure 11. Power Gain and Drain Efficiency versus CW Output Power 100 150 P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 25_C 85_C 100 300 I = 1250 465 MHz 200 250 MRF5S4140HR3 MRF5S4140HSR3 7 ...

  • Page 8

    ... Figure 13. Series Equivalent Source and Load Impedance — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 490 MHz = 2 Ω 490 MHz f = 440 MHz Z source f = 440 MHz Vdc 1250 mA Avg out source load MHz W W 440 0.359 - j1.19 1.35 - j0.870 445 0 ...

  • Page 9

    ... Z9 1.000″ x 0.226″ Microstrip Z10 0.498″ x 0.630″ Microstrip Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic — 420 - 430 MHz Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 420 - 430 MHz Part B1, B2 Ferrite Beads, Short C1, C14 120 pF Chip Capacitors C2, C13 0 ...

  • Page 10

    ... C18 Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 10 450 MHz Rev. 0 Ver C22 + C19 C20 C21 C17 C16 C10 C15 C11 C12 C14 C9 C13 RF Device Data Freescale Semiconductor ...

  • Page 11

    ... IRL 415 420 425 430 435 f, FREQUENCY (MHz Watts Avg. out −41 −5 −47 −8 −53 −11 −14 −59 −65 −17 440 47 44.5 42 39.5 37 −35 −4 −7 −40 −45 −10 −50 −13 −55 −16 −60 −19 440 MRF5S4140HR3 MRF5S4140HSR3 11 ...

  • Page 12

    ... MHz f = 400 MHz Figure 18. Series Equivalent Source and Load Impedance — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 450 MHz Z Z load source f = 400 MHz = 5 Ω Vdc 1250 mA Avg out source load MHz W W 400 ...

  • Page 13

    ... Z9 1.000″ x 0.226″ Microstrip Z10 0.498″ x 0.630″ Microstrip Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic — 489 - 499 MHz Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 489 - 499 MHz Part B1, B2 Ferrite Beads, Short C1, C13 120 pF Chip Capacitors ...

  • Page 14

    ... C16 Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 14 450 MHz Rev. 0 Ver C20 + C17 C18 C19 C15 C14 C9 C10 C11 C13 C12 RF Device Data Freescale Semiconductor ...

  • Page 15

    ... IRL 485 490 495 500 505 f, FREQUENCY (MHz Watts Avg. out −45 −5 −50 −8 −55 −11 −14 −60 −65 −17 510 47 44.5 42 39.5 37 −35 −6 −8 −40 −45 −10 −50 −12 −55 −14 −60 −16 510 MRF5S4140HR3 MRF5S4140HSR3 15 ...

  • Page 16

    ... Input Matching Network Figure 23. Series Equivalent Source and Load Impedance — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 519 MHz = 2 Ω Z load f = 519 MHz f = 469 MHz source f = 469 MHz Vdc 1250 mA Avg out source load MHz ...

  • Page 17

    ... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF5S4140HR3 MRF5S4140HSR3 17 ...

  • Page 18

    ... Offset. ALT1 Measured in 30 kHz 0.001 Bandwidth @ ±1.98 MHz Offset. PAR = 9 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 25. Single - Carrier CCDF N - CDMA MRF5S4140HR3 MRF5S4140HSR3 CDMA TEST SIGNAL −10 −20 −30 −40 −50 −ALT1 in 30 kHz Integrated BW −60 − ...

  • Page 19

    ... M R 0.365 0.375 9.27 S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF5S4140HR3 MRF5S4140HSR3 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 19 ...

  • Page 20

    ... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S4140HR3 MRF5S4140HSR3 Document Number: MRF5S4140H Rev. 2, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...