mrf5s4125n Freescale Semiconductor, Inc, mrf5s4125n Datasheet

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mrf5s4125n

Manufacturer Part Number
mrf5s4125n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 465 MHz: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1100 mA, P
out
= 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
J
Document Number: MRF5S4125N
450 - 480 MHz, 25 W AVG., 28 V
MRF5S4125NBR1
MRF5S4125NR1 MRF5S4125NBR1
MRF5S4125NR1
LATERAL N - CHANNEL
CASE 1486 - 03, STYLE 1
RF POWER MOSFETs
CASE 1484 - 04, STYLE 1
SINGLE N - CDMA
MRF5S4125NR1
MRF5S4125NBR1
TO - 270 WB - 4
- 65 to +150
Value
- 0.5, +65
- 0.5, +15
TO - 272 WB - 4
Value
0.33
0.43
200
(2,3)
Rev. 0, 1/2007
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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