mrf5s9150h Freescale Semiconductor, Inc, mrf5s9150h Datasheet

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mrf5s9150h

Manufacturer Part Number
mrf5s9150h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 960 MHz. Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Designed for N - CDMA base station applications with frequencies from 869
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
Power Gain — 19.7 dB
Drain Efficiency — 28.4%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
Select Documentation/Application Notes - AN1955.
= 1500 mA, P
out
= 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Test Methodology
Characteristic
Rating
DD
Operation
μ
″ Nominal.
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF5S9150H
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF5S9150HSR3
MRF5S9150HR3 MRF5S9150HSR3
MRF5S9150HR3
MRF5S9150HSR3
880 MHz, 33 W AVG., 28 V
MRF5S9150HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
1C (Minimum)
SINGLE N - CDMA
NI - 780S
NI - 780
III (Minimum)
A (Minimum)
- 65 to +150
- 0.5, +68
- 0.5, +15
Value
Class
Value
0.34
0.34
150
200
(1)
Rev. 1, 5/2006
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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mrf5s9150h Summary of contents

Page 1

... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, DD Operation DD ″ Nominal. μ Document Number: MRF5S9150H Rev. 1, 5/2006 MRF5S9150HR3 MRF5S9150HSR3 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 ...

Page 2

... MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF5S9150HR3 MRF5S9150HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Z7 0.077″ x 0.630″ Microstrip Z8 0.221″ x 0.630″ Microstrip Z9 0.193″ x 0.630″ Microstrip Figure 1. MRF5S9150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S9150HR3(HSR3) Test Circuit Component Designations and Values Part B1 Small Ferrite Bead C1, C2, C17 47 pF Chip Capacitors C3, C12 0.8- 8.0 pF Variable Capacitors, Gigatrim ...

Page 4

... C14 B1 C15 C1 C3 Figure 2. MRF5S9150HR3(HSR3) Test Circuit Component Layout MRF5S9150HR3 MRF5S9150HSR3 4 900 MHz Rev. 3 C16 R2 R1 C17 C10 C22 C19 C20 C21 C18 C11 C2 C12 C13 C23 C24 C25 C26 C27 RF Device Data Freescale Semiconductor ...

Page 5

... Vdc 2250 mA = 750 mA 1500 mA 1875 mA 1125 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF5S9150HR3 MRF5S9150HSR3 400 5 ...

Page 6

... Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain MRF5S9150HR3 MRF5S9150HSR3 6 TYPICAL CHARACTERISTICS 1500 mA, Two−Tone Measurements −10 DQ (f1 + f2)/2 = Center Frequency of 880 MHz −20 −30 3rd Order −40 5th Order −50 7th Order − ...

Page 7

... Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application −30_C 60 85_C 100 = 1500 250 300 190 200 210 2 MRF5S9150HR3 MRF5S9150HSR3 7 ...

Page 8

... Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA MRF5S9150HR3 MRF5S9150HSR3 CDMA TEST SIGNAL −10 −20 −30 −40 −50 −ALT1 in 30 kHz Integrated BW −60 − ...

Page 9

... Z Z source MHz W 850 3.61 - j2.30 1.12 + j0.09 865 2.85 - j2.54 1.24 + j0.22 880 2.13 - j2.47 1.31 + j0.36 895 1.53 - j2.27 1.46 + j0.48 910 1.02 - j1.90 1.61 + j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load f = 850 MHz load W Output Matching Network MRF5S9150HR3 MRF5S9150HSR3 9 ...

Page 10

... MRF5S9150HR3 MRF5S9150HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... M U −−− 0.040 −−− S (INSULATOR) Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF5S9150HR3 MRF5S9150HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S9150HR3 MRF5S9150HSR3 Document Number: MRF5S9150H Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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