mrf5s9101n

Manufacturer Part Numbermrf5s9101n
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf5s9101n datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
• Typical GSM Performance: V
= 26 Volts, I
DD
100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
• Typical GSM EDGE Performance: V
50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.3% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
= 700 mA, P
=
DQ
out
= 28 Volts, I
= 650 mA, P
=
DD
DQ
out
Operation
DD
Document Number: MRF5S9101N
Rev. 4, 5/2006
MRF5S9101NR1
MRF5S9101NBR1
869 - 960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9101NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9101NBR1
Symbol
Value
Unit
V
- 0.5, +68
Vdc
DSS
V
- 0.5, +15
Vdc
GS
P
427
W
D
2.44
W/°C
T
- 65 to +150
°C
stg
T
200
°C
J
(1,2)
Symbol
Value
Unit
R
°C/W
θJC
0.41
0.47
MRF5S9101NR1 MRF5S9101NBR1
1

mrf5s9101n Summary of contents

  • Page 1

    ... Freescale Semiconductor = 700 mA out = 28 Volts 650 mA out Operation DD Document Number: MRF5S9101N Rev. 4, 5/2006 MRF5S9101NR1 MRF5S9101NBR1 869 - 960 MHz, 100 GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF5S9101NR1 CASE 1484 - 04, STYLE 272 ...

  • Page 2

    ... Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz Functional Tests (In Freescale Test Fixture, 50 ohm system) V Power Gain Drain Efficiency Input Return Loss Compression Point, CW out 1. Part internally input matched. MRF5S9101NR1 MRF5S9101NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS I DSS I ...

  • Page 3

    ... Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η D EVM SR1 SR2 Min Typ Max Unit = 28 Vdc Avg., DD out — 18 — dB — 42 — % — 2.3 — % rms — — dBc — — dBc MRF5S9101NR1 MRF5S9101NBR1 3 ...

  • Page 4

    ... Microstrip Z8 0.472″ x 0.087″ Microstrip Z9 0.384″ x 0.087″ Microstrip Figure 1. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Schematic Table 6. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Component Designations and Values Part C1, C2, C3 4.7 mF Chip Capacitors (2220) C4, C5 200B Chip Capacitors ...

  • Page 5

    ... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

  • Page 6

    ... 700 mA 1300 mA 16 500 mA 1100 mA 900 mA 15 300 OUTPUT POWER (WATTS) out Figure 5. Power Gain versus Output Power MRF5S9101NR1 MRF5S9101NBR1 6 TYPICAL CHARACTERISTICS - 900 MHz ps η Vdc 700 mA DQ 880 900 920 940 960 980 f, FREQUENCY (MHz) ...

  • Page 7

    ... W Avg Avg. 910 920 930 940 950 960 f, FREQUENCY (MHz) Frequency 85_C 20 −30_C 10 0 100 = 28 Vdc 650 mA −30_C OUTPUT POWER (WATTS) AVG. out versus Output Power MRF5S9101NR1 MRF5S9101NBR1 970 980 = 85_C C 25_C ...

  • Page 8

    ... Figure 13. MTTF Factor versus Junction Temperature −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −110 MRF5S9101NR1 MRF5S9101NBR1 8 TYPICAL CHARACTERISTICS - 900 MHz Vdc 650 940 MHz 25_C OUTPUT POWER (WATTS) AVG. ...

  • Page 9

    ... Microstrip Z8 0.279″ x 0.087″ Microstrip Z9 0.193″ x 0.087″ Microstrip Figure 15. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Schematic Table 7. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Component Designations and Values Part C1, C2, C3 4.7 mF Chip Capacitors (2220) C4, C5 200B Chip Capacitors ...

  • Page 10

    ... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 16. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Component Layout MRF5S9101NR1 MRF5S9101NBR1 10 ...

  • Page 11

    ... Figure 20. Error Vector Magnitude and Drain −10 −12 −14 −16 −18 −20 940 = 100 −10 −12 −14 −16 −18 −20 940 = η 25_C C EVM OUTPUT POWER (WATTS) AVG. out Efficiency versus Output Power MRF5S9101NR1 MRF5S9101NBR1 100 11 ...

  • Page 12

    ... W Avg. −82 850 860 870 880 f, FREQUENCY (MHz) Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −65 −70 −75 −80 −85 MRF5S9101NR1 MRF5S9101NBR1 12 TYPICAL CHARACTERISTICS - 800 MHz −45 −50 −55 −60 − Vdc 650 mA −70 DQ − ...

  • Page 13

    ... MHz Ω Ω 845 4.29 - j2.23 1.15 - j0.04 865 3.94 - j1.24 1.05 - j0.10 890 2.72 - j0.96 1.02 - j0.07 920 1.96 - j1.02 1.03 - j0.15 960 1.58 - j1.43 1.03 - j0.05 990 1.27 - j1.54 0.73 - j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF5S9101NR1 MRF5S9101NBR1 13 ...

  • Page 14

    ... MRF5S9101NR1 MRF5S9101NBR1 14 NOTES RF Device Data Freescale Semiconductor ...

  • Page 15

    ... RF Device Data Freescale Semiconductor NOTES MRF5S9101NR1 MRF5S9101NBR1 15 ...

  • Page 16

    ... MRF5S9101NR1 MRF5S9101NBR1 16 PACKAGE DIMENSIONS ...

  • Page 17

    ... RF Device Data Freescale Semiconductor MRF5S9101NR1 MRF5S9101NBR1 17 ...

  • Page 18

    ... MRF5S9101NR1 MRF5S9101NBR1 18 RF Device Data Freescale Semiconductor ...

  • Page 19

    ... RF Device Data Freescale Semiconductor MRF5S9101NR1 MRF5S9101NBR1 19 ...

  • Page 20

    ... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF5S9101NR1 MRF5S9101NBR1 Document Number: MRF5S9101N Rev. 4, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...