mrf5s9101n Freescale Semiconductor, Inc, mrf5s9101n Datasheet - Page 8

• Manufacturer Part Number: mrf5s9101n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S9101NR1 MRF5S9101NBR1
8
1.E+10
1.E+09
1.E+08
1.E+07
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
−65
−70
−75
−80
−85
Figure 13. MTTF Factor versus Junction Temperature
Center 1.96 GHz
TYPICAL CHARACTERISTICS - 900 MHz
0
90
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
600 kHz
V
I
f = 940 MHz
DQ
DD
Figure 12. Spectral Regrowth @ 600 kHz
100 110 120 130 140 150 160 170 180 190 200
Reference Power
10
400 kHz
= 650 mA
= 28 Vdc
P
20
Figure 14. EDGE Spectrum
out
T
GSM TEST SIGNAL
J
, JUNCTION TEMPERATURE (°C)
, OUTPUT POWER (WATTS) AVG.
versus Output Power
D
2
for MTTF in a particular application.
30
40
200 kHz
50
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
60
25_C
70
400 kHz
Span 2 MHz
T
C
600 kHz
= 85_C
80
−30_C
2
90
210
Freescale Semiconductor
RF Device Data