mrf5s19100h Freescale Semiconductor, Inc, mrf5s19100h Datasheet
mrf5s19100h
Related parts for mrf5s19100h
mrf5s19100h Summary of contents
Page 1
... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, DD Operation DD μ″ Nominal. Document Number: MRF5S19100H Rev. 4, 5/2006 MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 ...
Page 2
... Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S19100HR3 MRF5S19100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
Page 3
... Microstrip Z6 0.650″ x 0.050″ Microstrip Z7 0.320″ x 1.299″ Microstrip Z8 0.091″ x 1.133″ Microstrip Figure 1. MRF5S19100HR3(SR3) Test Circuit Schematic Table 5. MRF5S19100HR3(SR3) Test Circuit Component Designations and Values Part B1 Short RF Bead Chip Capacitor Chip Capacitor C3 1 μ ...
Page 4
... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19100HR3(SR3) Test Circuit Component Layout MRF5S19100HR3 MRF5S19100HSR3 4 ...
Page 5
... P , OUTPUT POWER (WATTS) PEP out versus Output Power Ideal P3dB = 51.98 dBm (157.81 W) P1dB = 51.3 dBm (135. Vdc 1000 Pulsed CW, 8 μsec(on), 1 msec(off 1960 MHz INPUT POWER (dBm) in Input Power MRF5S19100HR3 MRF5S19100HSR3 Actual ...
Page 6
... Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 10 Carrier CCDF N - CDMA MRF5S19100HR3 MRF5S19100HSR3 6 TYPICAL CHARACTERISTICS 9 10 −21 η D −28 IM3 −35 ...
Page 7
... Z Z source load MHz Ω 1930 4.45 - j5.32 1.98 - j2.58 1960 4.53 - j5.40 1.83 - j2.55 1990 5.12 - j5.45 1.60 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load = 10 Ω Ω Output Matching Network MRF5S19100HR3 MRF5S19100HSR3 7 ...
Page 8
... MRF5S19100HR3 MRF5S19100HSR3 8 NOTES RF Device Data Freescale Semiconductor ...
Page 9
... RF Device Data Freescale Semiconductor NOTES MRF5S19100HR3 MRF5S19100HSR3 9 ...
Page 10
... MRF5S19100HR3 MRF5S19100HSR3 10 NOTES RF Device Data Freescale Semiconductor ...
Page 11
... −−− 0.030 −−− S aaa 0.005 REF 0.127 REF (INSULATOR) bbb 0.010 REF 0.254 REF B ccc 0.015 REF 0.381 REF M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE F MRF5S19100HR3 MRF5S19100HSR3 MAX 20.70 9.91 4.32 12.83 1.14 0.15 1.70 5.33 20.02 20.02 9.53 9.52 1.02 0.76 11 ...
Page 12
... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S19100HR3 MRF5S19100HSR3 Document Number: MRF5S19100H Rev. 4, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...