mrf5s21045 Freescale Semiconductor, Inc, mrf5s21045 Datasheet

mrf5s21045

Manufacturer Part Number

mrf5s21045

Description

Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF5S21045.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - Carrier W - CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Freescale Semiconductor

Technical Data

Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with

this part replacement. N suffix added to part number to indicate transition to lead - free

terminations.

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

CW Operation

Thermal Resistance, Junction to Case

Designed for W - CDMA base station applications with frequencies from 2110

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 80°C, 45 W CW

Case Temperature 79°C, 10 W CW

out

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Power Gain — 14.5 dB

Drain Efficiency — 25.5%

IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth

Select Documentation/Application Notes - AN1955.

= 10 Watts Avg., Full Frequency Band, Channel Bandwidth =

= 25°C

Characteristic

Rating

Operation

= 28 Volts, I

= 500 mA,

Symbol

DSS

θJC

stg

CASE 1486 - 03, STYLE 1

MRF5S21045MR1 MRF5S21045MBR1

Document Number: MRF5S21045

MRF5S21045MBR1

CASE 1484 - 04, STYLE 1

MRF5S21045MR1

MRF5S21045MBR1

2170 MHz, 10 W AVG., 28 V

TO - 270 WB - 4

LATERAL N - CHANNEL

TO - 272 WB - 4

RF POWER MOSFETs

PLASTIC

- 65 to +150

2 x W - CDMA

- 0.5, +68

- 0.5, +15

Value

0.74

1.35

1.48

130

200

(1)

Rev. 2, 5/2006

W/°C

°C/W

Unit

Vdc

°C

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