mrf1150ma Tyco Electronics, mrf1150ma Datasheet

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mrf1150ma

Manufacturer Part Number
mrf1150ma
Description
150 W Peak, 960?1215 Mhz Microwave Power Transistor Npn Silicon
Manufacturer
Tyco Electronics
Datasheet
1.MRF1150MA.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF1150MA
Manufacturer:
FREESCALE
Quantity:
45
SEMICONDUCTOR TECHNICAL DATA
The RF Line
pulse TACAN, IFF, and DME transmitters.
REV 9
1
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T
Storage Temperature Range
Thermal Resistance, Junction to Case (3)
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain (4)
Designed for Class B and C common base amplifier applications in short
Guaranteed Performance @ 1090 MHz, 50 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
1. Pulse Width = 10 s, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 s Pulse on Tektronix 576 or equivalent.
Derate above 25 C
(I
(I
(I
(V
(I
C
C
E
C
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
CB
= 50 mAdc, V
= 50 mAdc, I
= 5.0 mAdc, I
= 5.0 Adc, V
= 50 Vdc, I
CE
E
E
Rating
C
BE
= 0)
= 0)
= 0)
= 5.0 Vdc)
= 0)
Characteristic
C
= 25 C (1) (2)
Characteristic
(T
C
= 25 C unless otherwise noted)
Symbol
V
V
T
P
CBO
EBO
I
stg
C
D
–65 to +150
Value
3.33
583
4.0
70
12
V
V
V
Symbol
(BR)CBO
(BR)CES
(BR)EBO
I
CBO
h
FE
Watts
W/ C
Unit
Vdc
Vdc
Adc
C
Symbol
R
Min
4.0
70
70
10
—
JC
150 W PEAK, 960–1215 MHz
Typ
—
—
—
—
30
CASE 332–04, STYLE 1
MICROWAVE POWER
TRANSISTOR
NPN SILICON
Max
0.3
Max
Order this document
10
—
—
—
—
by MRF1150MA/D
(continued)
mAdc
Unit
Unit
Vdc
Vdc
Vdc
C/W
—

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mrf1150ma Summary of contents

Page 1

... C unless otherwise noted) Symbol Min V 70 (BR)CES V 70 (BR)CBO V 4.0 (BR)EBO I — CBO Order this document by MRF1150MA/D 150 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 332–04, STYLE 1 Max Unit 0.3 C/W JC Typ Max Unit — — Vdc — — ...

Page 2

ELECTRICAL CHARACTERISTICS — continued Characteristic DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc 1.0 MHz FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1.0%) Common–Base Amplifier Power Gain ( ...

Page 3

Figure 4. Output Power versus Supply Voltage Figure 6. Series Equivalent Input/Output Impedance REV 9 3 Figure 5. Power Gain versus Frequency P = 150 out MHz 960 1090 1215 Conjugate ...

Page 4

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for ...

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