mrf1035mb Freescale Semiconductor, Inc, mrf1035mb Datasheet

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mrf1035mb

Manufacturer Part Number
mrf1035mb
Description
Microwave Power Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
MRF1035MB
Manufacturer:
ASI
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20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
long pulse TACAN, IFF, DME, and radar transmitters.
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Motorola, Inc. 1997
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Designed for Class B and C common base amplifier applications in short and
Guaranteed Performance @ 1090 MHz, 50 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Derate above 25 C
(I C = 20 mAdc, V BE = 0)
(I C = 20 mAdc, I E = 0)
(I E = 2.0 mAdc, I C = 0)
(V CB = 50 Vdc, I E = 0)
(I C = 500 mAdc, V CE = 5.0 Vdc)
Output Power = 35 Watts Peak
Minimum Gain = 10 dB
Rating
Characteristic
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
V CBO
V EBO
V CES
T stg
P D
I C
– 65 to +150
Value
200
4.0
2.0
60
60
35
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
(Replaces MRF1035MA/D)
I CBO
h FE
mW/ C
Watts
Unit
Vdc
Vdc
Vdc
Adc
C
Symbol
R JC
Min
4.0
60
60
10
MRF1035MB
35 W (PEAK), 960 – 1215 MHz
CASE 332A–03, STYLE 1
Typ
40
MICROWAVE POWER
Max
5.0
TRANSISTORS
NPN SILICON
Max
100
2.0
Order this document
by MRF1035MB/D
MRF1035MB
Unit
C/W
mAdc
Unit
Vdc
Vdc
Vdc
1

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mrf1035mb Summary of contents

Page 1

... Symbol R JC Symbol Min V (BR)CES 60 V (BR)CBO 60 V (BR)EBO 4.0 I CBO — (Replaces MRF1035MA/D) Order this document by MRF1035MB/D MRF1035MB 35 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 Max Unit 5.0 C/W Typ Max Unit — — ...

Page 2

... Vdc, P out = 35 W Peak 1090 MHz) Collector Efficiency ( Vdc, P out = 35 W Peak 1090 MHz) Load Mismatch ( Vdc, P out = 35 W Peak 1090 MHz, VSWR = 10:1 All Phase Angles INPUT Z2 MRF1035MB unless otherwise noted.) Symbol Min C ob — ...

Page 3

... FREQUENCY (MHz) P out = 1090 1215 f, FREQUENCY (MHz) P out = Ohms Ohms 960 3.8 + j8.2 7.5 – j3.3 6.0 + j8.2 9 4.2 + j5.7 9.1 + j1.7 impedance into which the device output operates at a given output power, voltage, and frequency. MRF1035MB 3 ...

Page 4

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INCHES MILLIMETERS MIN MAX MIN MAX 0.270 0.290 6.86 7.36 0.115 0.135 2.93 3.42 0.195 0.205 4.96 5.20 0.095 0.105 2.42 2.66 0.050 0.070 1.27 1.77 0.003 0.007 0.08 0.17 0.600 ––– 15.24 ––– 2. EMITTER 3. BASE 4. COLLECTOR Mfax is a trademark of Motorola, Inc. MOTOROLA RF DEVICE DATA MRF1035MB/D ...

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