mrf1535t1 Freescale Semiconductor, Inc, mrf1535t1 Datasheet

mrf1535t1

Manufacturer Part Number

mrf1535t1

Description

Rf Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF1535T1.pdf (16 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF1535T1

Manufacturer:

IXYS

Quantity:

101

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

cies to 520 MHz. The high gain and broadband performance of these devices

make them ideal for large - signal, common source amplifier applications in

12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Broadband - Full Power Across the Band: 135 - 175 MHz

• Broadband UHF/VHF Demonstration Amplifier Information Available

• 200_C Capable Plastic Package

• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. Moisture Sensitivity Level

Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this

part replacement. N suffix added to part number to indicate transition to lead - free

terminations.

1. Calculated based on the formula P

Drain- Source Voltage

Gate - Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Designed for broadband commercial and industrial applications with frequen-

Upon Request

Derate above 25°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 35 Watts

Power Gain — 10.0 dB

Efficiency — 50%

Test Methodology

= 25°C

Characteristic

Rating

(1)

T J – T C

R θJC

400 - 470 MHz

450 - 520 MHz

Rating

Symbol

Package Peak Temperature

DSS

θJC

stg

CASE 1264A - 02, STYLE 1

CASE 1264 - 09, STYLE 1

Document Number: MRF1535T1

TO - 272 - 6 WRAP

260

LATERAL N - CHANNEL

MRF1535FT1

520 MHz, 35 W, 12.5 V

RF POWER MOSFETs

MRF1535T1

PLASTIC

TO - 272 - 6

PLASTIC

- 65 to +150

BROADBAND

- 0.5, +40

MRF1535T1 MRF1535FT1

Value

0.50

0.90

± 20

135

200

Rev. 8, 5/2006

W/°C

°C/W

Unit

Vdc

Adc

°C

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