mrf1535n Freescale Semiconductor, Inc, mrf1535n Datasheet

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mrf1535n

Manufacturer Part Number
mrf1535n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Upon Request
Derate above 25°C
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
400 - 470 MHz
450 - 520 MHz
Rating
1
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
CASE 1264A - 02, STYLE 1
CASE 1264 - 09, STYLE 1
Document Number: MRF1535N
TO - 272 - 6 WRAP
MRF1535FNT1
260
MRF1535NT1
MRF1535FNT1
LATERAL N - CHANNEL
MRF1535NT1
520 MHz, 35 W, 12.5 V
RF POWER MOSFETs
PLASTIC
TO - 272 - 6
PLASTIC
MRF1535NT1 MRF1535FNT1
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
0.50
0.90
± 20
135
200
6
(2)
Rev. 10, 9/2006
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

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mrf1535n Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor 400 - 470 MHz 450 - 520 MHz Rating – θJC Document Number: MRF1535N Rev. 10, 9/2006 MRF1535NT1 MRF1535FNT1 520 MHz 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 ...

Page 2

... RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1535NT1 MRF1535FNT1 2 = 25°C unless otherwise noted 520 MHz f = 520 MHz Symbol Min Typ Max V 60 — — (BR)DSS I — ...

Page 3

... Microstrip 0.250″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip ® Glass Teflon , 31 mils 155 MHz 135 MHz 175 MHz V = 12.5 Vdc OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 RF OUTPUT N2 C20 C19 60 3 ...

Page 4

... BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 155 MHz 135 MHz Figure 5. Drain Efficiency versus Output Power 80 ...

Page 5

... Microstrip 0.120″ x 0.223″ Microstrip 1.380″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 450 MHz 470 MHz 520 MHz 500 MHz OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 V DD C22 RF OUTPUT 60 5 ...

Page 6

... Figure 15. Output Power versus Biasing Current 450 MHz 40 470 MHz 30 500 MHz 520 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 500 MHz Figure 14. Drain Efficiency versus Output Power 80 70 ...

Page 7

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1535NT1 MRF1535FNT1 7 ...

Page 8

... Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 20. Series Equivalent Input and Output Impedance MRF1535NT1 MRF1535FNT1 135 MHz = 12 out ...

Page 9

... S 22 ∠ φ ∠ φ 0.86 - 176 - 5 0.86 - 176 7 0.87 - 176 21 0.88 - 175 8 0.89 - 174 3 0.89 - 174 48 0.91 - 174 41 0.93 - 173 43 0.93 - 173 57 0.94 - 173 62 0.94 - 174 96 0.93 - 173 S 22 ∠ φ ∠ φ 0.89 - 177 4 0.89 - 177 7 0.89 - 177 17 0.90 - 176 40 0.90 - 175 35 0.91 - 175 57 0.92 - 174 50 0.93 - 173 68 0.93 - 173 99 0.94 - 173 78 0.93 - 175 92 0.92 - 174 MRF1535NT1 MRF1535FNT1 9 ...

Page 10

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1535NT1 MRF1535FNT1 10 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 11

... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1535NT1 MRF1535FNT1 11 ...

Page 12

... aaa aaa DATUM H PLANE MRF1535NT1 MRF1535FNT1 12 PACKAGE DIMENSIONS DRAIN SEATING C PLANE SEATING PLANE STYLE 1: PIN 1. SOURCE (COMMON) 2. DRAIN 3. SOURCE (COMMON) 4 ...

Page 13

... D 0.926 0.934 23.52 23.72 D1 0.810 BSC 20.57 BSC D2 0.608 BSC 15.44 BSC E 0.492 0.500 12.50 12.70 E1 0.246 0.254 6.25 6.45 E2 0.170 BSC 4.32 BSC F 0.025 BSC 0.64 BSC P 0.126 0.134 3.20 3.40 b1 0.193 0.199 4.90 5.05 b2 0.078 0.084 1.98 2.13 b3 0.088 0.094 2.24 2.39 c1 0.007 0.011 0.178 0.279 e 0.193 BSC 4.90 BSC aaa 0.004 0.10 bbb 0.008 0.20 MRF1535NT1 MRF1535FNT1 B 13 ...

Page 14

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1535NT1 MRF1535FNT1 Document Number: MRF1535N Rev. 10, 9/2006 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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