mrf1550n Freescale Semiconductor, Inc, mrf1550n Datasheet

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mrf1550n

Manufacturer Part Number
mrf1550n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• Broadband Demonstration Amplifier Information Available
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Upon Request
Derate above 25°C
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
Rating
1
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
CASE 1264 - 09, STYLE 1
CASE 1264A - 02, STYLE 1
Document Number: MRF1550N
TO - 272 - 6 WRAP
MRF1550FNT1
LATERAL N - CHANNEL
MRF1550NT1
260
MRF1550NT1
MRF1550FNT1
175 MHz, 50 W, 12.5 V
RF POWER MOSFETs
PLASTIC
TO - 272 - 6
PLASTIC
MRF1550NT1 MRF1550FNT1
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
0.50
0.75
± 20
165
200
12
(2)
Rev. 11, 9/2006
W/°C
Unit
°C/W
Unit
Vdc
Vdc
Adc
Unit
°C
°C
°C
W
1

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mrf1550n Summary of contents

Page 1

... NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Rating – θJC Document Number: MRF1550N Rev. 11, 9/2006 MRF1550NT1 MRF1550FNT1 175 MHz 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 ...

Page 2

... RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1550NT1 MRF1550FNT1 2 = 25°C unless otherwise noted) C Symbol DS(on 175 MHz f = 175 MHz Min Typ Max — ...

Page 3

... Microstrip 0.270″ x 0.080″ Microstrip 0.730″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 175 MHz 135 MHz 155 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1550NT1 MRF1550FNT1 RF OUTPUT 80 3 ...

Page 4

... Figure 6. Output Power versus Biasing Current 135 MHz 60 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1550NT1 MRF1550FNT1 4 TYPICAL CHARACTERISTICS 80 70 135 MHz 12.5 Vdc Figure 5. Drain Efficiency versus Output Power ...

Page 5

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1550NT1 MRF1550FNT1 5 ...

Page 6

... Figure 11. Series Equivalent Input and Output Impedance MRF1550NT1 MRF1550FNT1 Ω 175 MHz f = 175 MHz 135 MHz f = 135 MHz 500 mA out MHz Ω Ω 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0 Complex conjugate of source in impedance Complex conjugate of the load ...

Page 7

... S 22 ∠ φ ∠ φ 119 0.93 - 178 4 0.93 - 178 - 1 0.93 - 177 18 0.93 - 176 28 0.94 - 176 77 0.94 - 175 85 0.95 - 175 53 0.96 - 174 74 0.97 - 174 84 0.97 - 174 106 0.97 - 175 116 0.96 - 174 ∠ φ ∠ φ 116 0.94 - 179 42 0.94 - 178 13 0.94 - 177 43 0.95 - 176 65 0.95 - 175 68 0.95 - 175 74 0.97 - 174 MRF1550NT1 MRF1550FNT1 7 ...

Page 8

... Table 5. Common Source Scattering Parameters ( ∠ φ MHz 11 400 0.97 - 179 450 0.98 - 178 500 0.98 - 178 550 0.98 - 178 600 0.98 - 178 MRF1550NT1 MRF1550FNT1 8 = 12.5 Vdc) (continued 4.0 mA (continued ∠ φ 0.49 63 0.005 0.41 63 0.005 0.36 62 0.003 0.32 58 0.004 0.27 58 0.009 S 22 ∠ φ ...

Page 9

... DS(on) ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. has a positive temperature DS(on) DSS can result in permanent GS ), whose value is application dependent 150 mA, which is the DQ DQ MRF1550NT1 MRF1550FNT1 is not 9 Ω may 9 ...

Page 10

... This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt MRF1550NT1 MRF1550FNT1 10 resistive loading, or output to input feedback. The RF test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region ...

Page 11

... MIN MAX A 0.098 0.108 2.49 2.74 A1 0.000 0.004 0.00 0.10 A2 0.100 0.104 2.54 2.64 D 0.928 0.932 23.57 23.67 D1 0.806 0.814 20.47 20.68 E 0.296 0.304 7.52 7.72 E1 0.248 0.252 6.30 6.40 E2 0.241 0.245 6.12 6.22 L 0.060 0.070 1.52 1.78 b1 0.193 0.199 4.90 5.05 b2 0.078 0.084 1.98 2.13 b3 0.088 0.094 2.24 2.39 c1 0.007 0.011 0.18 0.28 e 0.193 BSC 4.90 BSC r1 0.063 0.068 1.60 1. aaa 0.004 0.10 MRF1550NT1 MRF1550FNT1 11 ...

Page 12

... aaa aaa aaa SEATING D PLANE Y MRF1550NT1 MRF1550FNT1 DRAIN ZONE "J" STYLE 1: PIN 1. SOURCE (COMMON) 2. DRAIN 3. SOURCE (COMMON) 4. SOURCE (COMMON) 5. GATE 6. SOURCE (COMMON) ...

Page 13

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. RF Device Data Document Number: MRF1550N Rev. 11, 9/2006 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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