mrf18060blr3 Freescale Semiconductor, Inc, mrf18060blr3 Datasheet

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mrf18060blr3

Manufacturer Part Number
mrf18060blr3
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM 1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
Output Power
40μ″ Nominal.
Derate above 25°C
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
Document Number: MRF18060B
MRF18060BLSR3
MRF18060BLR3 MRF18060BLSR3
MRF18060BLR3
MRF18060BLR3
MRF18060BLSR3
1930- 1990 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.03
0.97
180
150
200
Rev. 8, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf18060blr3 Summary of contents

Page 1

... CASE 465 - 06, STYLE 780 MRF18060BLR3 CASE 465A - 06, STYLE 780S MRF18060BLSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 180 W D 1.03 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 0.97 °C/W θJC Class 2 (Minimum) M3 (Minimum) MRF18060BLR3 MRF18060BLSR3 1 ...

Page 2

... DD out 1930 - 1990 MHz) 1. Part is internally matched both on input and output meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch batch consistency. MRF18060BLR3 MRF18060BLSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I ...

Page 3

... Z6 Z7 PCB MRF18060 V SUPPLY + OUTPUT 0.60″ x 0.09″ Microstrip 1.00″ x 0.09″ Microstrip 0.51″ x 0.94″ Microstrip 0.59″ x 0.98″ Microstrip 0.79″ x 0.09″ Microstrip 1.38″ x 0.09″ Microstrip 0.79″ x 0.09″ Microstrip ® Teflon Glass V SUPPLY Ground MRF18060BLR3 MRF18060BLSR3 3 ...

Page 4

... Chip Capacitor, ACCU - P (0805 Ω Chip Resistor (0805) R2 kΩ Chip Resistors (0805) R3 1.2 kΩ Chip Resistor (0805) R4 2.2 kΩ Chip Resistor (0805 kΩ, SMD Potentiometer Figure 3. 1800 - 2000 MHz Demo Board Schematic MRF18060BLR3 MRF18060BLSR3 ...

Page 5

... Figure 4. 1800 - 2000 MHz Demo Board Component Layout RF Device Data Freescale Semiconductor V Ground BIAS SUPPLY C5 Î Î Î Î Î Î Î Î Î Î Î Î Î C8 Î Î Î Î Î Î Î Î MRF18060 MRF18060BLR3 MRF18060BLSR3 5 ...

Page 6

... 0 1800 1820 1840 1860 f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 MRF18060BLR3 MRF18060BLSR3 6 100 Vdc 1880 MHz 0 100 18 Figure 6. Output Power versus Supply Voltage Vdc DD 40 ...

Page 7

... Z Z source load MHz Ω Ω 1700 0.60 - j2.53 2.27 - j3.44 1800 0.80 - j3.20 2.05 - j3.05 1900 0.92 - j3.42 1.90 - j2.90 2000 1.07 - j3.59 1.64 - j2.88 2100 1.31 - j4.00 1.29 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF18060BLR3 MRF18060BLSR3 7 ...

Page 8

... MRF18060BLR3 MRF18060BLSR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF18060BLR3 MRF18060BLSR3 9 ...

Page 10

... MRF18060BLR3 MRF18060BLSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF18060BLR3 MRF18060BLSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 MAX 20.70 9.91 4.32 12.83 1.14 0.15 1.70 5.33 20.02 20.02 9.53 9.52 1 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF18060BLR3 MRF18060BLSR3 Document Number: MRF18060B Rev. 8, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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