mrf18085alr3 Freescale Semiconductor, Inc, mrf18085alr3 Datasheet

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mrf18085alr3

Manufacturer Part Number
mrf18085alr3
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
f r e q u e n c i e s f r o m 1 8 0 0 t o 2 0 0 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805- 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
(1805 - 1880 MHz)
Output Power
40μ″ Nominal.
Derate above 25°C
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
Select Documentation/Application Notes - AN1955.
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
Document Number: MRF18085A
MRF18085ALSR3
MRF18085ALR3 MRF18085ALSR3
MRF18085ALSR3
MRF18085ALR3
1805- 1880 MHz, 85 W, 26 V
MRF18085ALR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
GSM/GSM EDGE
M3 (Minimum)
1 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.56
0.79
273
150
200
(1)
Rev. 6, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf18085alr3 Summary of contents

Page 1

... CASE 465 - 06, STYLE 780 MRF18085ALR3 CASE 465A - 06, STYLE 780S MRF18085ALSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 273 W D 1.56 W/° +150 °C stg T 150 ° 200 °C J (1) Symbol Value Unit R 0.79 °C/W θJC Class 1 (Minimum) M3 (Minimum) MRF18085ALR3 MRF18085ALSR3 1 ...

Page 2

... MHz Part is internally matched both on input and output meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch batch consistency. MRF18085ALR3 MRF18085ALSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS ...

Page 3

... Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 30 mils, ε C10 MRF18085ALR3 MRF18085ALSR3 RF 3 ...

Page 4

... Figure 5. Power Gain versus Output Power IRL @ IRL @ 1750 1800 1850 f, FREQUENCY (MHz) Figure 7. Power Gain versus Frequency MRF18085ALR3 MRF18085ALSR3 4 TYPICAL CHARACTERISTICS Vdc 1840 MHz T = 25_C 800 mA ...

Page 5

... MHz Ω Ω 1710 1.13 - j3.62 1.79 - j2.88 1785 1.61 - j4.23 1.82 - j3.15 1805 1.69 - j4.34 1.90 - j2.66 1880 2.83 - j5.25 2.09 - j2.77 1930 3.00 - j5.18 2.01 - j2.44 1960 4.39 - j4.97 2.01 - j2.57 1990 6.59 - j4.74 1.79 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF18085ALR3 MRF18085ALSR3 5 ...

Page 6

... MRF18085ALR3 MRF18085ALSR3 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE MRF18085ALR3 MRF18085ALSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 7 ...

Page 8

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF18085ALR3 MRF18085ALSR3 Document Number: MRF18085A Rev. 6, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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