mrf6v2150n Freescale Semiconductor, Inc, mrf6v2150n Datasheet
mrf6v2150n
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... Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 50 Volts 450 mA Symbol V DSS Document Number: MRF6V2150N Rev. 1, 5/2007 MRF6V2150NR1 MRF6V2150NBR1 10 - 450 MHz, 150 LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6V2150NR1 ...
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices ...
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... Z5 0.434″ x 0.220″ Microstrip Z6, Z7 0.298″ x 0.630″ Microstrip Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount C1 47 μ ...
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... C10 C11 C12 R2 C13 * Stacked Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout MRF6V2150NR1 MRF6V2150NBR1 4 C4 C19 C5 C18 C6 C17 R1 B2 C15* C8 C16 C20 L2 C14 L1 C23 C21 C22 MRF6V2150N/NB Rev Device Data Freescale Semiconductor ...
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... DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 5. DC Safe Operating Area = 675 Vdc 220 MHz 10 100 P , OUTPUT POWER (WATTS) CW out P3dB = 52.61 dBm (182.39 W) Actual Vdc 450 220 MHz INPUT POWER (dBm) in MRF6V2150NR1 MRF6V2150NBR1 200 200 Ideal 32 5 ...
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... C 25 25_C 24 85_C 23 η OUTPUT POWER (WATTS) CW out Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF6V2150NR1 MRF6V2150NBR1 6 TYPICAL CHARACTERISTICS 450 220 MHz 35 150 200 10 Figure 11. Power Output versus Power Input ...
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... P = 150 out f Z source MHz W 220 2.45 + j6.95 3.90 + j5. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Z load W Output Matching Network MRF6V2150NR1 MRF6V2150NBR1 7 ...
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... MRF6V2150NR1 MRF6V2150NBR1 8 PACKAGE DIMENSIONS ...
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... RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 9 ...
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... MRF6V2150NR1 MRF6V2150NBR1 10 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 11 ...
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... Feb. 2007 • Initial Release of Data Sheet 1 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22 MRF6V2150NR1 MRF6V2150NBR1 12 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6V2150N Rev. 1, 5/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...