mrf6vp41kh Freescale Semiconductor, Inc, mrf6vp41kh Datasheet

mrf6vp41kh

Manufacturer Part Number

mrf6vp41kh

Description

Rf Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF6VP41KH.pdf (13 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

‘

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

450 MHz. Devices are unmatched and are suitable for use in industrial,

medical and scientific applications.

• Typical Pulsed Performance at 450 MHz: V

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak

Features

• Qualified Up to a Maximum of 50 V

• Integrated ESD Protection

• Excellent Thermal Stability

• Designed for Push - Pull Operation

• Greater Negative Gate - Source Voltage Range for Improved Class C

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Designed primarily for pulsed wideband applications with frequencies up to

Power

Operation

out

Power Gain — 20 dB

Drain Efficiency — 64%

= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%

Rating

Operation

= 50 Volts, I

= 150 mA,

Symbol

DSS

stg

CASE 375D - 05, STYLE 1

CASE 375E - 04, STYLE 1

Document Number: MRF6VP41KH

inA

inB

MRF6VP41KHSR6

MRF6VP41KHR6 MRF6VP41KHSR6

MRF6VP41KHSR6

MRF6VP41KHR6

10 - 450 MHz, 1000 W, 50 V

GSA

GSB

Figure 1. Pin Connections

LATERAL N - CHANNEL

NI - 1230S

PARTS ARE PUSH - PULL

RF POWER MOSFETs

NI - 1230

BROADBAND

- 65 to +150

- 0.5, +110

- 6, +10

Value

(Top View)

150

200

Rev. 0, 1/2008

2 RF

outA

outB

Unit

Vdc

°C

DSA

DSB

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