mrf6vp21kh Freescale Semiconductor, Inc, mrf6vp21kh Datasheet

no-image

mrf6vp21kh

Manufacturer Part Number
mrf6vp21kh
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6VP21KH
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
mrf6vp21khR5
Manufacturer:
ZCOMM
Quantity:
1 400
Part Number:
mrf6vp21khR5
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
mrf6vp21khR6
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
235 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 225 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak
Features
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for pulsed wideband applications with frequencies up to
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Power
Operation
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
out
Power Gain — 24 dB
Drain Efficiency — 67.5%
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Characteristic
Rating
DD
Operation
DD
= 50 Volts, I
DQ
= 150 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
RF
RF
C
J
Document Number: MRF6VP21KH
inA
inB
/V
/V
MRF6VP21KHR6
10 - 235 MHz, 1000 W, 50 V
GSA
GSB
Figure 1. Pin Connections
LATERAL N - CHANNEL
CASE 375D - 05, STYLE 1
RF POWER MOSFET
PART IS PUSH - PULL
3
4
BROADBAND
- 65 to +150
- 0.5, +110
Value
- 6, +10
Value
0.03
(Top View)
150
200
NI - 1230
(1,2)
MRF6VP21KHR6
Rev. 0, 1/2008
1
2 RF
RF
°C/W
outA
outB
Unit
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

Related parts for mrf6vp21kh

mrf6vp21kh Summary of contents

Page 1

... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 50 Volts 150 mA Operation DD Document Number: MRF6VP21KH Rev. 0, 1/2008 MRF6VP21KHR6 10 - 235 MHz, 1000 LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 375D - 05, STYLE 1230 PART IS PUSH - PULL ...

Page 2

... Functional Tests (In Freescale Test Fixture, 50 ohm system) V 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. MRF6VP21KHR6 2 = 25°C unless otherwise noted) C Symbol I GSS V (BR)DSS ...

Page 3

... Microstrip Z8, Z9 0.357″ x 0.518″ Microstrip Z10, Z11 0.200″ x 0.518″ Microstrip Figure 2. MRF6VP21KHR6 Test Circuit Schematic Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values Part B1 95 Ω, 100 MHz Long Ferrite Bead C1 47 μ Electrolytic Capacitor C2 22 μ ...

Page 4

... C10 C11 J1 L2 C12 * L4 is wrapped around R2. Figure 3. MRF6VP21KHR6 Test Circuit Component Layout MRF6VP21KHR6 4 T1 C23 L3 C19 C17 C18 C16 C15 C20 C14 L4, R2* C21 C13 T2 J2 C24 C22 C25 MRF6VP21KH Rev Device Data ...

Page 5

... P , INPUT POWER (dBm) PULSED in Input Power 150 mA 225 MHz DQ Pulse Width = 100 μsec Duty Cycle = 20% 400 600 800 1000 1200 1400 , OUTPUT POWER (WATTS) PULSED out Output Power MRF6VP21KHR6 200 40 1600 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V Duty Cycle = 20%, and η MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature MRF6VP21KHR6 6 TYPICAL CHARACTERISTICS Vdc DD = −30_C ...

Page 7

... Vdc 150 mA 1000 W Peak DD DQ out f Z source MHz W 225 1.16 + j4.06 2.86 + j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Z load W Output Matching Network MRF6VP21KHR6 7 ...

Page 8

... MRF6VP21KHR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF6VP21KHR6 9 ...

Page 10

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Jan. 2008 • Initial Release of Data Sheet MRF6VP21KHR6 10 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 11

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6VP21KH Rev. 0, 1/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords