mrf6s9060n Freescale Semiconductor, Inc, mrf6s9060n Datasheet

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mrf6s9060n

Manufacturer Part Number
mrf6s9060n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
Derate above 25°C
out
Power Gain — 20 dB
Drain Efficiency — 63%
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 450 mA, P
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
C
= 25°C
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 500 mA, P
DQ
= 500 mA,
out
DD
= 60 Watts,
= 28 Volts,
Symbol
V
V
T
P
DSS
T
GS
stg
D
J
BROADBAND RF POWER MOSFETs
Document Number: MRF6S9060N
MRF6S9060NBR1
MRF6S9060NR1 MRF6S9060NBR1
MRF6S9060NR1
880 MHz, 14 W AVG., 28 V
LATERAL N - CHANNEL
CASE 1265 - 08, STYLE 1
CASE 1337 - 03, STYLE 1
SINGLE N - CDMA
MRF6S9060NBR1
MRF6S9060NR1
- 65 to +150
- 0.5, +68
- 0.5, + 12
Value
TO - 270 - 2
TO - 272 - 2
PLASTIC
PLASTIC
227
200
1.3
Rev. 3, 5/2006
W/°C
Unit
Vdc
Vdc
°C
°C
W
1

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mrf6s9060n Summary of contents

Page 1

... RF Device Data Freescale Semiconductor = 28 Volts Volts 500 mA 500 mA Watts, DQ out Document Number: MRF6S9060N Rev. 3, 5/2006 MRF6S9060NR1 MRF6S9060NBR1 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 270 - 2 PLASTIC MRF6S9060NR1 CASE 1337 - 03, STYLE 1 ...

Page 2

... Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9060NR1 MRF6S9060NBR1 2 Rating 3 = 25°C unless otherwise noted) C ...

Page 3

... C Symbol G ps η D EVM SR1 SR2 G ps η D IRL P1dB Min Typ Max Unit — 20 — dB — 46 — % — 1.5 — % — — dBc — — dBc = 28 Vdc, DD — 20 — dB — 63 — % — — dB — 67 — W MRF6S9060NR1 MRF6S9060NBR1 3 ...

Page 4

... Z6 0.280″ x 0.270″ x 0.530″ Taper Z7 0.087″ x 0.525″ Microstrip Z8 0.435″ x 0.525″ Microstrip Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead B2 Ferrite Bead C1, C8, C14, C15 47 pF Chip Capacitors C2, C4, C13 0 ...

Page 5

... Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 B2 C8 C15 C11 C10 C16 C17 R4 C18 C12 C14 C13 TO−270/272 Surface / Bolt down MRF6S9060NR1 MRF6S9060NBR1 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9060NR1 MRF6S9060NBR1 6 TYPICAL CHARACTERISTICS = 28 Vdc (Avg.), I = 450 mA out IRL 850 860 870 880 ...

Page 7

... Gain and Drain Efficiency versus Output Power = 28 Vdc (PEP) out = 450 mA, Two−Tone Measurements 1 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −25 η D −35 ALT1 85_C −45 −30_C ACPR −55 −65 25_C −75 −85 MRF6S9060NR1 MRF6S9060NBR1 100 300 7 ...

Page 8

... Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 8 TYPICAL CHARACTERISTICS −30_C T = −30_C 25_C 85_C η Vdc 450 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency ...

Page 9

... FREQUENCY (MHz) MRF6S9060NR1 MRF6S9060NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

Page 10

... 910 MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9060NR1 MRF6S9060NBR1 Ω 910 MHz Z load f = 850 MHz Vdc 450 mA Avg out source load MHz Ω Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF6S9060NR1 MRF6S9060NBR1 11 ...

Page 12

... MRF6S9060NR1 MRF6S9060NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 13 ...

Page 14

... MRF6S9060NR1 MRF6S9060NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... AREA OF THE HEAT SLUG. INCHES MILLIMETERS DIM MIN MAX MIN MAX A .100 .104 2.54 2.64 A1 .039 .043 0.99 1.09 A2 .040 .042 1.02 1.07 D .928 .932 23.57 23.67 D1 .810 BSC 20.57 BSC E .438 .442 11.12 11.23 E1 .248 .252 6.30 6.40 E2 .241 .245 6.12 6.22 F .025 BSC 0.64 BSC b1 .193 .199 4.90 5.05 c1 .007 .011 .18 .28 r1 .063 .068 1.60 1.73 aaa .004 .10 MRF6S9060NR1 MRF6S9060NBR1 15 ...

Page 16

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S9060NR1 MRF6S9060NBR1 Document Number: MRF6S9060N Rev. 3, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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