mrf6s9125n Freescale Semiconductor, Inc, mrf6s9125n Datasheet

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mrf6s9125n

Manufacturer Part Number
mrf6s9125n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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mrf6s9125nBR1
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
950 mA, P
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
P
921 - 960 MHz)
125 Watts, Full Frequency Band (921 - 960 MHz)
CW Output Power
Derate above 25°C
out
Power Gain — 19 dB
Drain Efficiency — 62%
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
= 60 Watts Avg., Full Frequency Band (865 - 960 MHz or
out
= 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95
C
= 25°C
DD
= 28 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
DQ
= 700 mA, P
DD
DQ
= 28 Volts, I
= 700 mA,
out
=
DQ
=
Symbol
V
V
T
P
DSS
T
GS
stg
D
J
CASE 1486 - 03, STYLE 1
CASE 1484 - 04, STYLE 1
Document Number: MRF6S9125N
865 - 960 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
MRF6S9125NBR1
MRF6S9125NBR1
MRF6S9125NR1 MRF6S9125NBR1
MRF6S9125NR1
MRF6S9125NR1
TO - 270 WB - 4
TO - 272 WB - 4
LATERAL N - CHANNEL
PLASTIC
PLASTIC
RF POWER MOSFETs
- 65 to +150
- 0.5, +68
- 0.5, +12
Value
398
200
2.3
Rev. 4, 5/2006
W/°C
Unit
Vdc
Vdc
°C
°C
W
1

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mrf6s9125n Summary of contents

Page 1

... Volts 700 mA 700 mA out Operation DD Document Number: MRF6S9125N Rev. 4, 5/2006 MRF6S9125NR1 MRF6S9125NBR1 865 - 960 MHz AVG SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 ...

Page 2

... Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. MRF6S9125NR1 MRF6S9125NBR1 2 Rating 3 = 25°C unless otherwise noted) C ...

Page 3

... Vdc η D IRL P1dB Min Typ Max Unit = 28 Vdc 700 mA — 20 — dB — 40 — % — 1.8 — % rms — — dBc — — dBc = 700 mA 125 W, DQ out — 19 — dB — 62 — % — — dB — 125 — W MRF6S9125NR1 MRF6S9125NBR1 3 ...

Page 4

... Microstrip Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Chip Capacitor C2 6.2 pF Chip Capacitor C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim ...

Page 5

... C10 C1 Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C7 C20 C21 C6 C19 R2 C18 R1 C4 C11 C14 L2 L1 C13 C2 C12 C5 C3 C22 V DD C23 C17 C16 C15 900 MHz TO272 WB Rev. 0 MRF6S9125NR1 MRF6S9125NBR1 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two −Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9125NR1 MRF6S9125NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 Pilot DQ Sync, Paging, Traffic Codes 8 Through 13 ...

Page 7

... Gain and Drain Efficiency versus Output Power = 28 Vdc 125 W (PEP) out = 950 mA, Two −Tone Measurements 1 10 TWO −TONE SPACING (MHz) versus Tone Spacing Ideal Actual −30 25_C −40 ALT1 85_C −50 −30_C 25_C 85_C −60 ACPR −70 −80 100 200 MRF6S9125NR1 MRF6S9125NBR1 100 7 ...

Page 8

... P , OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 13. MTTF Factor versus Junction Temperature MRF6S9125NR1 MRF6S9125NBR1 8 TYPICAL CHARACTERISTICS 21 70 −30_C Vdc DD 10 ...

Page 9

... FREQUENCY (MHz) MRF6S9125NR1 MRF6S9125NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

Page 10

... MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 900 MHz Z load f = 860 MHz = 5 Ω source f = 860 MHz Vdc 950 mA Avg out source load MHz Ω Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 ...

Page 11

... Taper Z6 0.200″ x 0.620″ Microstrip Z7, Z8 0.040″ x 0.620″ Microstrip Figure 17. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 7. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part C1 μ Tantalum Capacitors C3, C16, C17 0.56 μ Chip Capacitors ...

Page 12

... C21 C4 Figure 18. MRF6S9125NR1(NBR1) Test Circuit Component Layout MRF6S9125NR1 MRF6S9125NBR1 12 EDGE CHARACTERIZATION C17 L1 C10 C18 C19 C20 C16 C12 C11 C14 C15 C13 900 MHz TO−272 WB Rev Device Data Freescale Semiconductor ...

Page 13

... D 10 100 P , OUTPUT POWER (WATTS) AVG. out Output Power = 70 W Avg Avg Avg Avg. 960 970 980 = 28 Vdc = 700 25_C C 22.5 45 67.5 90 112 OUTPUT POWER (WATTS) out versus Output Power MRF6S9125NR1 MRF6S9125NBR1 300 135 13 ...

Page 14

... EDGE CHARACTERIZATION TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −110 MRF6S9125NR1 MRF6S9125NBR1 14 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz Center 943 MHz 200 kHz Figure 24. EDGE Spectrum 400 kHz 600 kHz ...

Page 15

... Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests RF Device Data Freescale Semiconductor f = 980 MHz Z load f = 900 MHz 980 MHz f = 900 MHz Z source Z load W Input Matching Network = 5 Ω Output Device Matching Under Network Test Z Z source load MRF6S9125NR1 MRF6S9125NBR1 15 ...

Page 16

... MRF6S9125NR1 MRF6S9125NBR1 16 PACKAGE DIMENSIONS ...

Page 17

... RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 17 ...

Page 18

... MRF6S9125NR1 MRF6S9125NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 19 ...

Page 20

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S9125NR1 MRF6S9125NBR1 Document Number: MRF6S9125N Rev. 4, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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